JPS5645087A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5645087A
JPS5645087A JP12132679A JP12132679A JPS5645087A JP S5645087 A JPS5645087 A JP S5645087A JP 12132679 A JP12132679 A JP 12132679A JP 12132679 A JP12132679 A JP 12132679A JP S5645087 A JPS5645087 A JP S5645087A
Authority
JP
Japan
Prior art keywords
layers
joint
layer
region
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12132679A
Other languages
Japanese (ja)
Other versions
JPS6133275B2 (en
Inventor
Osamu Hasegawa
Toshiaki Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12132679A priority Critical patent/JPS5645087A/en
Publication of JPS5645087A publication Critical patent/JPS5645087A/en
Publication of JPS6133275B2 publication Critical patent/JPS6133275B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To prevent occurrence of dark line defect, by limiting activated region in on reverse joint region using GaAs crystal or GaAlAs crystal, and also by prescribing carrier concentration on low-carrier-concentration side in a semiconductor layer constituting a reverse joint region. CONSTITUTION:By allowing Ga1-xAlxAs crystal layer, whose x values are varied, to achieve liquid phase epitaxial growth in order of 1,2,3 and 4 on a GaAs substrate which is not shown in the figure, a photosemiconductor device of 4-layer structure is prepared. In such a constitution, electric conduction types of all the layers 1 through 4 are to be P, P, N and P, respectively, and x values are to be 0.38, 0.06, 0.3 and 0.15, respectively, and hetero-joint is developed between the layers 1 and 2, between the layers 2 and 3 is a PN joint which impresses forward bias, and between the layers 3 and 4 is a PN joint which impresses reverse bias. At this time, carrier concentration of the layer 3 is prescribed to become 3X10<18>-1X10<19>/cm<3>, the concentrations of other layers are set to higher value, and the layer 2 is made to operate as a luminous region.
JP12132679A 1979-09-20 1979-09-20 Semiconductor device Granted JPS5645087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12132679A JPS5645087A (en) 1979-09-20 1979-09-20 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12132679A JPS5645087A (en) 1979-09-20 1979-09-20 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5645087A true JPS5645087A (en) 1981-04-24
JPS6133275B2 JPS6133275B2 (en) 1986-08-01

Family

ID=14808475

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12132679A Granted JPS5645087A (en) 1979-09-20 1979-09-20 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5645087A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177984A (en) * 1986-01-31 1987-08-04 Matsushita Electric Ind Co Ltd Light emitting semiconductor device
EP0354140A2 (en) * 1988-08-05 1990-02-07 EASTMAN KODAK COMPANY (a New Jersey corporation) Method of improving yield of led arrays

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6476574A (en) * 1987-09-18 1989-03-22 Pioneer Electronic Corp High-speed searching method in disk player
JPS6467772A (en) * 1987-09-08 1989-03-14 Pioneer Electronic Corp High-speed target address search method for disk player

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62177984A (en) * 1986-01-31 1987-08-04 Matsushita Electric Ind Co Ltd Light emitting semiconductor device
EP0354140A2 (en) * 1988-08-05 1990-02-07 EASTMAN KODAK COMPANY (a New Jersey corporation) Method of improving yield of led arrays
EP0354140A3 (en) * 1988-08-05 1990-07-04 EASTMAN KODAK COMPANY (a New Jersey corporation) Method of improving yield of led arrays

Also Published As

Publication number Publication date
JPS6133275B2 (en) 1986-08-01

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