JPS5645081A - Low-loss diode - Google Patents

Low-loss diode

Info

Publication number
JPS5645081A
JPS5645081A JP12025079A JP12025079A JPS5645081A JP S5645081 A JPS5645081 A JP S5645081A JP 12025079 A JP12025079 A JP 12025079A JP 12025079 A JP12025079 A JP 12025079A JP S5645081 A JPS5645081 A JP S5645081A
Authority
JP
Japan
Prior art keywords
layer
type
impurity concentration
concentration
converted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12025079A
Other languages
Japanese (ja)
Other versions
JPH0373150B2 (en
Inventor
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12025079A priority Critical patent/JPS5645081A/en
Publication of JPS5645081A publication Critical patent/JPS5645081A/en
Publication of JPH0373150B2 publication Critical patent/JPH0373150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To keep lowering forward direction voltage drop until it gets to a large current value, in a diode having a PIN structure, by setting carrier lifetime under 10<-9> seconds in a surface region where an impurity concentration of either a P layer or an N layer is at least 5X1016/cm<3> or more. CONSTITUTION:Si is used as a semiconductor material and a region, which has a flat impurity concentration distribution of less than 5X10<16>/cm<3>, is formed in either a P layer or an N layer, and the surface region is provided with a higher impurity concentration, and the section where the concentration is higher than 5X10<16>/cm<3> is converted to an Au-Si alloy layer. That is to say, an N<-> type layer and a P type layer are laminated on an N<+> type Si substrate and allowed to grow epitaxially, and a P<+> type layer whose surface concentration is 1X10<20>/cm<3>, etc. is dispersedly formed here. And then, by soldering Au on this surface and providing it with heat treatment at a high temperature, all the P<+> type layers are converted to Au-Si alloy layers for lowering lifetime. By doing so, forwarding direction voltage drop can be controlled only to 0.7V or so even at the time when voltage of 100A/cm<3> is passing.
JP12025079A 1979-09-19 1979-09-19 Low-loss diode Granted JPS5645081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12025079A JPS5645081A (en) 1979-09-19 1979-09-19 Low-loss diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12025079A JPS5645081A (en) 1979-09-19 1979-09-19 Low-loss diode

Publications (2)

Publication Number Publication Date
JPS5645081A true JPS5645081A (en) 1981-04-24
JPH0373150B2 JPH0373150B2 (en) 1991-11-20

Family

ID=14781542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12025079A Granted JPS5645081A (en) 1979-09-19 1979-09-19 Low-loss diode

Country Status (1)

Country Link
JP (1) JPS5645081A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59157501A (en) * 1983-02-28 1984-09-06 Daicel Chem Ind Ltd Position coordinate detector
JPS59189679A (en) * 1983-04-13 1984-10-27 Hitachi Ltd Diode
EP0135733A2 (en) * 1983-08-06 1985-04-03 SEMIKRON Elektronik GmbH Rectifier diode for a high reverse voltage
FR2578101A1 (en) * 1985-02-26 1986-08-29 Thomson Csf PIN-TYPE HYPERFREQUENCY DIODE WITH ABRUPT TRANSITIONS
JPH01501030A (en) * 1986-09-30 1989-04-06 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト Semiconductor component with an anode-side P region and an adjacent lightly doped N base region

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59157501A (en) * 1983-02-28 1984-09-06 Daicel Chem Ind Ltd Position coordinate detector
JPS59189679A (en) * 1983-04-13 1984-10-27 Hitachi Ltd Diode
EP0135733A2 (en) * 1983-08-06 1985-04-03 SEMIKRON Elektronik GmbH Rectifier diode for a high reverse voltage
FR2578101A1 (en) * 1985-02-26 1986-08-29 Thomson Csf PIN-TYPE HYPERFREQUENCY DIODE WITH ABRUPT TRANSITIONS
JPH01501030A (en) * 1986-09-30 1989-04-06 オイペック・オイロペーイッシェ・ゲゼルシャフト・フュール・ライスツングスハルプライター・エムベーハー・ウント・コンパニイ・コマンディートゲゼルシャフト Semiconductor component with an anode-side P region and an adjacent lightly doped N base region
US5063428A (en) * 1986-09-30 1991-11-05 eupec Europaische Gesellschaft fur Leistungshalbleiter mbH & Co. KG Semiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zone

Also Published As

Publication number Publication date
JPH0373150B2 (en) 1991-11-20

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