JPS567485A - Manufacturing of luminous element - Google Patents

Manufacturing of luminous element

Info

Publication number
JPS567485A
JPS567485A JP8303379A JP8303379A JPS567485A JP S567485 A JPS567485 A JP S567485A JP 8303379 A JP8303379 A JP 8303379A JP 8303379 A JP8303379 A JP 8303379A JP S567485 A JPS567485 A JP S567485A
Authority
JP
Japan
Prior art keywords
layer
substrate
type
current
luminous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8303379A
Other languages
Japanese (ja)
Inventor
Koji Tomita
Toshikimi Takagi
Tadaaki Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8303379A priority Critical patent/JPS567485A/en
Publication of JPS567485A publication Critical patent/JPS567485A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To effectively obtain a current narrowed part to make it suitable for use in fiber bonding by providing annular grooves at parts other than the current flow path of the substrate when a luminous element is fabricated, and thereafter growing an active layer such as a luminous layer or the like on the substrate. CONSTITUTION:On the peripheral side of a current path part 10 of a P-type GaAs substrate 1 used in the formation of a luminous element, there are formed an annular groove 2 and a slitlike groove 11 encircling the substrate 1 by photoetching. The substrate 1 is fabricated in this manner, and as these grooves 2 and 11 are buried in the substrate 1, a Cr doped high resistance Ga0.7Al0.3As layer 3, a Zn doped P-type Ga0.7Al0.3As layer 4, a P-type GaAs luminous layer 5 and an N-type Ga0.7Al0.3As layer 6 are laminated and subjected to epitaxial growth in liquid phase. Thereafter, an N-type Ga0.9Al0.1As contact layer 7 is applied thereon, and further the layer 7 is covered with an Al2O3 film 8 to open a window, where S is diffused to form a current path 9. By this arrangement, the diffusion of Zn in the layer 4 to the layer 3 upon the diffusion of S is limited to a current path 10 and a desired current narrowing can be achieved.
JP8303379A 1979-06-29 1979-06-29 Manufacturing of luminous element Pending JPS567485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8303379A JPS567485A (en) 1979-06-29 1979-06-29 Manufacturing of luminous element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8303379A JPS567485A (en) 1979-06-29 1979-06-29 Manufacturing of luminous element

Publications (1)

Publication Number Publication Date
JPS567485A true JPS567485A (en) 1981-01-26

Family

ID=13790907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8303379A Pending JPS567485A (en) 1979-06-29 1979-06-29 Manufacturing of luminous element

Country Status (1)

Country Link
JP (1) JPS567485A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0563235A (en) * 1991-08-29 1993-03-12 Shin Etsu Handotai Co Ltd Manufacture of semiconductor element
JPH06502281A (en) * 1991-05-08 1994-03-10 アセア　ブラウン　ボベリ　アクチボラグ surface emitting light emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06502281A (en) * 1991-05-08 1994-03-10 アセア　ブラウン　ボベリ　アクチボラグ surface emitting light emitting diode
JPH0563235A (en) * 1991-08-29 1993-03-12 Shin Etsu Handotai Co Ltd Manufacture of semiconductor element

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