JPS6451671A - Solar cell - Google Patents

Abstract

PURPOSE:To obtain, with low cost and large area, a solar cell having the same high conversion efficiency as the one made on a single crystal GaAs substrate, by growing compound semiconductor single crystal on a neucleus-formation surface formed in a non-neucleus-formation surface, the area of the neucleus- formation surface being so minute that only a single neucleus generates. CONSTITUTION:On a substrate 3 composed of SiO2, a lower electrode 2 of AuGe turning to a first electrode is formed, and thereon, the insulating layer of a non-doped SiO2 film 1 is formed. By using reactive ion etching art, holes 1mum in diameter are made at intervals of 100mum to expose the lower electrode 2. This expossed lower electrode turns to a neucleus-formation surface, and the above insulating layer turns to a non-neucleus-formation surface. Further the selective epitaxial growth of GaAs is performed. This first compound semiconductor single crystal 4a is made an Ni type, and this second compound semiconductor single crystal 5 is made a p-type. Between both layers, n-type single crystal is interposed. Finally, a comb-type electrode 9 is formed as a second electrode, on the second compound semiconductor single crystal 5, by sintering.