JPH0756896B2 - Solar cell - Google Patents
Solar cellInfo
- Publication number
- JPH0756896B2 JPH0756896B2 JP63111221A JP11122188A JPH0756896B2 JP H0756896 B2 JPH0756896 B2 JP H0756896B2 JP 63111221 A JP63111221 A JP 63111221A JP 11122188 A JP11122188 A JP 11122188A JP H0756896 B2 JPH0756896 B2 JP H0756896B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- solar cell
- conductivity type
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、変換効率を向上させた太陽電池に関するも
のである。TECHNICAL FIELD The present invention relates to a solar cell having improved conversion efficiency.
第２図は従来のBSF（Back Surface Field）型のGaAs太
陽電池の一例の構造を示す断面図である。FIG. 2 is a sectional view showing the structure of an example of a conventional BSF (Back Surface Field) type GaAs solar cell.
この図において、１は第１導電型のGaAs基板、2aは第１
導電型の中間層としてのAlxGa1-xAs層、３は第１導電型
の第１の半導体層としてのGaAs層、４は第２導電型の第
２の半導体層としてのGaAs層、５はAlyGa1-yAs窓層、６
は反射防止膜、７は上部電極、８は下部電極である。In this figure, 1 is a GaAs substrate of the first conductivity type, and 2a is the first
Al x Ga 1-x As layer as an intermediate layer of conductivity type, 3 is a GaAs layer as a first semiconductor layer of a first conductivity type, 4 is a GaAs layer as a second semiconductor layer of a second conductivity type, 5 is Al y Ga 1-y As window layer, 6
Is an antireflection film, 7 is an upper electrode, and 8 is a lower electrode.
この従来の太陽電池は、第１導電型のGaAs基板１の上
に、第１導電型のAlxGa1-xAs層2aが設けられ、その上に
第１導電型のGaAs層3,第２導電型のGaAs層４が設けられ
てpn接合が形成されている。さらにその上には第２導電
型のAlyGa1-yAs窓層５および反射防止膜６が設けられて
いるが、それらの一部はエッチング除去されてコンタク
トホールが形成されている。そして、このコンタクトホ
ール内には上部電極７が設けられ、GaAs基板１の下部に
は下部電極８が設けられている。In this conventional solar cell, a first conductivity type GaAs substrate 1 is provided with a first conductivity type Al x Ga 1-x As layer 2a, on which a first conductivity type GaAs layer 3, A GaAs layer 4 of two conductivity type is provided to form a pn junction. Further, a second conductivity type Al y Ga 1-y As window layer 5 and an antireflection film 6 are provided thereon, and a part of them is removed by etching to form a contact hole. An upper electrode 7 is provided in this contact hole, and a lower electrode 8 is provided below the GaAs substrate 1.
この構造の太陽電池では、GaAs基板１とGaAs層３との間
にAlxGa1-xAs層2aが設けられているため、BSF効果によ
ってpn接合の逆方向飽和電流（Io）が実効的に減少し
て、太陽電池の開放端電圧（Voc）が向上して光電変換
効率が向上する。In the solar cell of this structure, the Al x Ga 1-x As layer 2a is provided between the GaAs substrate 1 and the GaAs layer 3, so that the reverse saturation current (I o ) of the pn junction is effective due to the BSF effect. The solar cell's open-circuit voltage (V oc ) is improved and the photoelectric conversion efficiency is improved.
上記のようなBSF型の太陽電池は、太陽電池の活性領域
であるGaAs層３、４を格子定数の異なるAlxGa1-xAs層2a
の上に成長させなければならず、その結晶性が悪くな
り、また、GaAs/AlxGa1-xAs界面の質も悪いため、キャ
リアの再結合速度が大きいうえ、BSF効果も十分得られ
ず、光電変換効率が低いという問題点があった。In the BSF type solar cell as described above, the Al x Ga 1-x As layer 2a having different lattice constants is formed in the GaAs layers 3 and 4 which are the active regions of the solar cell.
Has to be grown on top of it, its crystallinity deteriorates, and the quality of the GaAs / Al x Ga 1-x As interface is poor, resulting in a high carrier recombination rate and sufficient BSF effect. However, there is a problem that the photoelectric conversion efficiency is low.
この発明は、かかる問題点を解決するためになされたも
ので、活性領域の結晶性がよく、かつGaAs/AlxGa1-xAs
界面の質も良好で、界面におけるキャリアの再結合速度
が小さいうえBSF効果が高く、光電変換率の高い太陽電
池を得ることを目的とする。The present invention has been made in order to solve such a problem, and has good crystallinity in the active region and GaAs / Al x Ga 1-x As
The objective is to obtain a solar cell with good interface quality, low recombination rate of carriers at the interface, high BSF effect, and high photoelectric conversion rate.
この発明に係る太陽電池は、BSF効果を生じさせる中間
層を第１の半導体層と格子定数を揃えた超格子層で構成
したものである。In the solar cell according to the present invention, the intermediate layer that produces the BSF effect is composed of a superlattice layer having the same lattice constant as the first semiconductor layer.
この発明においては、中間層上に成長する第１の半導体
層の結晶性が改善され、かつ良好な界面特性が得られ
る。According to the present invention, the crystallinity of the first semiconductor layer grown on the intermediate layer is improved, and good interface characteristics are obtained.
第１図はこの発明の太陽電池の一実施例の構造を示す断
面図である。FIG. 1 is a sectional view showing the structure of an embodiment of the solar cell of the present invention.
この図において、２は中間層としてのAlxGa1-xAs/GaAs
超格子層である。In this figure, 2 is Al x Ga 1-x As / GaAs as an intermediate layer
It is a superlattice layer.
この発明の太陽電池も、基本的な構成，動作は第２図に
示したものと同様であるが、中間層としてAlxGa1-xAs/G
aAs超格子層２を用いる点が異なる。The solar cell of the present invention also has the same basic configuration and operation as those shown in FIG. 2, except that Al x Ga 1-x As / G is used as an intermediate layer.
The difference is that the aAs superlattice layer 2 is used.
すなわち、この発明では、活性領域であるGaAs層3,4
が、格子定数の揃ったAlxGa1-xAs/GaAs超格子層２上に
成長しているので、GaAs層3,4の結晶性が改善されると
ともに、超格子層２の最上層のAlxGa1-xAsとGaAs層３と
の間では極めて良好なGaAs/AlxGa1-xAs界面特性が得ら
える。That is, in the present invention, the GaAs layers 3 and 4 which are the active regions are
However, since it is grown on the Al x Ga 1-x As / GaAs superlattice layer 2 having a uniform lattice constant, the crystallinity of the GaAs layers 3 and 4 is improved, and the uppermost layer of the superlattice layer 2 is formed. Very good GaAs / Al x Ga 1-x As interface characteristics can be obtained between the Al x Ga 1-x As and the GaAs layer 3.
したがって、再結合速度が小さくなるほか、AlxGa1-xAs
/GaAs超格子層２によるBSF効果がAlxGa1-xAs/GaAs単層
によるBSF効果よりも高くなって太陽電池の開放端電圧
（Voc）が向上し、光電変換効率が向上する。Therefore, the recombination rate becomes smaller and Al x Ga 1-x As
The BSF effect of the / GaAs superlattice layer 2 is higher than the BSF effect of the Al x Ga 1-x As / GaAs single layer, and the open-circuit voltage (V oc ) of the solar cell is improved, and the photoelectric conversion efficiency is improved.
この発明は以上説明したとおり、BSF効果を生じさせる
中間層を第１の半導体層と格子定数を揃えた超格子層で
構成したので、従来の中間層のようにバンドギャップは
活性層より大きく都合がよいが、結晶性の点で問題があ
ったものが、結晶欠陥を減少するほか、BSF効果が高く
なって開放端電圧が向上し、光電変換効率が向上すると
いう効果がある。As described above, according to the present invention, since the intermediate layer that causes the BSF effect is composed of the superlattice layer having the same lattice constant as the first semiconductor layer, the bandgap is larger than that of the active layer as in the conventional intermediate layer. Although there is a problem in terms of crystallinity, it has the effects of reducing crystal defects, enhancing the BSF effect, improving the open-circuit voltage, and improving photoelectric conversion efficiency.
第１図はこの発明の太陽電池の一実施例の構造を示す構
造断面図、第２図は従来の太陽電池の一例の構造を示す
断面図である。 図において、１はGaAs基板、２はAlxGa1-xAs/GaAs超格
子層、3,4はGaAs層、５はAlyGa1-yAs窓層、６は反射防
止膜、７は上部電極、８は下部電極である。 なお、各図中の同一符号は同一または相当部分を示す。FIG. 1 is a sectional view showing the structure of an embodiment of the solar cell of the present invention, and FIG. 2 is a sectional view showing the structure of an example of a conventional solar cell. In the figure, 1 is a GaAs substrate, 2 is an Al x Ga 1-x As / GaAs superlattice layer, 3 and 4 are GaAs layers, 5 is an Al y Ga 1-y As window layer, 6 is an antireflection film, and 7 is The upper electrode and 8 are lower electrodes. The same reference numerals in each drawing indicate the same or corresponding parts.
Claims (1)
層、第１導電性の第１のGaAs半導体層、第２導電型の第
２のGaAs半導体層、AlGaAs窓層を順次備えたことを特徴
とする太陽電池。1. A GaAs substrate of a first conductivity type, an AlGaAs / GaAs superlattice layer, a first GaAs semiconductor layer of a first conductivity type, a second GaAs semiconductor layer of a second conductivity type, and an AlGaAs window layer. A solar cell characterized by that.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63111221A JPH0756896B2 (en) | 1988-05-06 | 1988-05-06 | Solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63111221A JPH0756896B2 (en) | 1988-05-06 | 1988-05-06 | Solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01280367A JPH01280367A (en) | 1989-11-10 |
| JPH0756896B2 true JPH0756896B2 (en) | 1995-06-14 |
Family
ID=14555601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63111221A Expired - Lifetime JPH0756896B2 (en) | 1988-05-06 | 1988-05-06 | Solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0756896B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534598A (en) * | 2019-07-24 | 2019-12-03 | 上海空间电源研究所 | A kind of compound solar cell containing superlattice structure back surface field |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9122197D0 (en) * | 1991-10-18 | 1991-11-27 | Imperial College | A concentrator solar cell |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60218880A (en) * | 1984-04-13 | 1985-11-01 | Nippon Telegr & Teleph Corp <Ntt> | Inp solar battery |
| JPS60218881A (en) * | 1984-04-13 | 1985-11-01 | Nippon Telegr & Teleph Corp <Ntt> | Gaas solar battery |
| JPS6298614A (en) * | 1985-10-24 | 1987-05-08 | Sharp Corp | Semiconductor device |
-
1988
- 1988-05-06 JP JP63111221A patent/JPH0756896B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534598A (en) * | 2019-07-24 | 2019-12-03 | 上海空间电源研究所 | A kind of compound solar cell containing superlattice structure back surface field |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01280367A (en) | 1989-11-10 |
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