JPS6465870A - Semiconductor element of silicon carbide - Google Patents
Semiconductor element of silicon carbideInfo
- Publication number
- JPS6465870A JPS6465870A JP22328387A JP22328387A JPS6465870A JP S6465870 A JPS6465870 A JP S6465870A JP 22328387 A JP22328387 A JP 22328387A JP 22328387 A JP22328387 A JP 22328387A JP S6465870 A JPS6465870 A JP S6465870A
- Authority
- JP
- Japan
- Prior art keywords
- high temperature
- fet
- constitution
- utilized
- schottky junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To obtain an SiC element which is operational at high temperature by a method wherein Pt is utilized as a material which is used to form a Schottky junction. CONSTITUTION:A p-type SiC layer 2 formed out of SiH4, C3H5, and B is deposited on an n-type Si substrate 1 through the CVD method. Next, an n-type SiC layer 3 is made to overlap thereon using N2. Ni ohmic electrodes 4 a and 5 are provided onto the layer 3, and a Pt electrode 7 is evaporated at an intermediate point between the electrodes 4 and 5 independently of them. Ni or the like is made to be laminated on the Pt film 6, it necessary. In this constitution, a FET is able to operate at high temperature under a sever condition through a small Schottky junction inverted bias leakage current. Therefore, the FET of this design is used as a high frequency element or a large power element utilized at high temperature.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22328387A JPS6465870A (en) | 1987-09-07 | 1987-09-07 | Semiconductor element of silicon carbide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22328387A JPS6465870A (en) | 1987-09-07 | 1987-09-07 | Semiconductor element of silicon carbide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6465870A true JPS6465870A (en) | 1989-03-13 |
Family
ID=16795702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22328387A Pending JPS6465870A (en) | 1987-09-07 | 1987-09-07 | Semiconductor element of silicon carbide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6465870A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270252A (en) * | 1988-10-25 | 1993-12-14 | United States Of America As Represented By The Secretary Of The Navy | Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide |
JP2000208755A (en) * | 1999-01-19 | 2000-07-28 | Matsushita Electronics Industry Corp | Field effect transistor and its manufacture |
JP2002524860A (en) * | 1998-08-28 | 2002-08-06 | クリー インコーポレイテッド | Stacked dielectric in silicon carbide semiconductor structure |
US7012332B2 (en) | 2002-10-11 | 2006-03-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having sealing structure for wide gap type semiconductor chip |
-
1987
- 1987-09-07 JP JP22328387A patent/JPS6465870A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270252A (en) * | 1988-10-25 | 1993-12-14 | United States Of America As Represented By The Secretary Of The Navy | Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide |
JP2002524860A (en) * | 1998-08-28 | 2002-08-06 | クリー インコーポレイテッド | Stacked dielectric in silicon carbide semiconductor structure |
JP5021860B2 (en) * | 1998-08-28 | 2012-09-12 | クリー インコーポレイテッド | Multilayer dielectrics in silicon carbide semiconductor structures |
JP2000208755A (en) * | 1999-01-19 | 2000-07-28 | Matsushita Electronics Industry Corp | Field effect transistor and its manufacture |
US7012332B2 (en) | 2002-10-11 | 2006-03-14 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having sealing structure for wide gap type semiconductor chip |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE240588T1 (en) | SILICON CARBIDE FIELD CONTROLLED TWO-POLE SWITCH | |
GB988902A (en) | Semiconductor devices and methods of making same | |
JPS6465870A (en) | Semiconductor element of silicon carbide | |
KR900019250A (en) | Compound semiconductor devices | |
JPS55102267A (en) | Semiconductor control element | |
JPS6451671A (en) | Solar cell | |
JPS55120178A (en) | Mis variable capacitance diode with plural electrode structures | |
JPS55125666A (en) | Semiconductor device | |
JPS55162223A (en) | Semiconductor device and its preparation | |
JPS54140881A (en) | Semiconductor dvice | |
JPS5623751A (en) | Manufacture of integrated circuit device | |
JPS5457981A (en) | Semiconductor device | |
JPS5720476A (en) | Diode | |
JPS5780769A (en) | Semiconductor device | |
JPS55162263A (en) | Semiconductor device | |
JPH0556849B2 (en) | ||
JPS6486547A (en) | Manufacture of semiconductor element | |
JPS5240980A (en) | Process for production of semiconductor device | |
JPS5742171A (en) | Production of field effect semiconductor device | |
JPS577956A (en) | Semiconductor device | |
JPS5612779A (en) | Zener diode | |
JPS5439582A (en) | Integrated composite diode device | |
JPS54145485A (en) | Gunn diode | |
JPS567449A (en) | Semiconductor device | |
JPS57155773A (en) | High pressure-resistant planar transistor |