JPS6465870A - Semiconductor element of silicon carbide - Google Patents

Semiconductor element of silicon carbide

Info

Publication number
JPS6465870A
JPS6465870A JP22328387A JP22328387A JPS6465870A JP S6465870 A JPS6465870 A JP S6465870A JP 22328387 A JP22328387 A JP 22328387A JP 22328387 A JP22328387 A JP 22328387A JP S6465870 A JPS6465870 A JP S6465870A
Authority
JP
Japan
Prior art keywords
high temperature
fet
constitution
utilized
schottky junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22328387A
Other languages
Japanese (ja)
Inventor
Yoshihisa Fujii
Akira Suzuki
Masaki Furukawa
Mitsuhiro Shigeta
Atsuko Uemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP22328387A priority Critical patent/JPS6465870A/en
Publication of JPS6465870A publication Critical patent/JPS6465870A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain an SiC element which is operational at high temperature by a method wherein Pt is utilized as a material which is used to form a Schottky junction. CONSTITUTION:A p-type SiC layer 2 formed out of SiH4, C3H5, and B is deposited on an n-type Si substrate 1 through the CVD method. Next, an n-type SiC layer 3 is made to overlap thereon using N2. Ni ohmic electrodes 4 a and 5 are provided onto the layer 3, and a Pt electrode 7 is evaporated at an intermediate point between the electrodes 4 and 5 independently of them. Ni or the like is made to be laminated on the Pt film 6, it necessary. In this constitution, a FET is able to operate at high temperature under a sever condition through a small Schottky junction inverted bias leakage current. Therefore, the FET of this design is used as a high frequency element or a large power element utilized at high temperature.
JP22328387A 1987-09-07 1987-09-07 Semiconductor element of silicon carbide Pending JPS6465870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22328387A JPS6465870A (en) 1987-09-07 1987-09-07 Semiconductor element of silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22328387A JPS6465870A (en) 1987-09-07 1987-09-07 Semiconductor element of silicon carbide

Publications (1)

Publication Number Publication Date
JPS6465870A true JPS6465870A (en) 1989-03-13

Family

ID=16795702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22328387A Pending JPS6465870A (en) 1987-09-07 1987-09-07 Semiconductor element of silicon carbide

Country Status (1)

Country Link
JP (1) JPS6465870A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
JP2000208755A (en) * 1999-01-19 2000-07-28 Matsushita Electronics Industry Corp Field effect transistor and its manufacture
JP2002524860A (en) * 1998-08-28 2002-08-06 クリー インコーポレイテッド Stacked dielectric in silicon carbide semiconductor structure
US7012332B2 (en) 2002-10-11 2006-03-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having sealing structure for wide gap type semiconductor chip

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
JP2002524860A (en) * 1998-08-28 2002-08-06 クリー インコーポレイテッド Stacked dielectric in silicon carbide semiconductor structure
JP5021860B2 (en) * 1998-08-28 2012-09-12 クリー インコーポレイテッド Multilayer dielectrics in silicon carbide semiconductor structures
JP2000208755A (en) * 1999-01-19 2000-07-28 Matsushita Electronics Industry Corp Field effect transistor and its manufacture
US7012332B2 (en) 2002-10-11 2006-03-14 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having sealing structure for wide gap type semiconductor chip

Similar Documents

Publication Publication Date Title
ATE240588T1 (en) SILICON CARBIDE FIELD CONTROLLED TWO-POLE SWITCH
GB988902A (en) Semiconductor devices and methods of making same
JPS6465870A (en) Semiconductor element of silicon carbide
KR900019250A (en) Compound semiconductor devices
JPS55102267A (en) Semiconductor control element
JPS6451671A (en) Solar cell
JPS55120178A (en) Mis variable capacitance diode with plural electrode structures
JPS55125666A (en) Semiconductor device
JPS55162223A (en) Semiconductor device and its preparation
JPS54140881A (en) Semiconductor dvice
JPS5623751A (en) Manufacture of integrated circuit device
JPS5457981A (en) Semiconductor device
JPS5720476A (en) Diode
JPS5780769A (en) Semiconductor device
JPS55162263A (en) Semiconductor device
JPH0556849B2 (en)
JPS6486547A (en) Manufacture of semiconductor element
JPS5240980A (en) Process for production of semiconductor device
JPS5742171A (en) Production of field effect semiconductor device
JPS577956A (en) Semiconductor device
JPS5612779A (en) Zener diode
JPS5439582A (en) Integrated composite diode device
JPS54145485A (en) Gunn diode
JPS567449A (en) Semiconductor device
JPS57155773A (en) High pressure-resistant planar transistor