JPS577956A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS577956A JPS577956A JP8234180A JP8234180A JPS577956A JP S577956 A JPS577956 A JP S577956A JP 8234180 A JP8234180 A JP 8234180A JP 8234180 A JP8234180 A JP 8234180A JP S577956 A JPS577956 A JP S577956A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- surface separating
- type
- diode
- separating layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a diode in which a depletion layer does not reach an ohmic layer even in a thin epitaxial layer by a method wherein a lower surface separating layer functioning as an anode of the diode is formed in a divided shape, and the N type epitaxial layer is grown. CONSTITUTION:The lower surface separating layers 15, 16, 17 made up in separated shapes are formed on an N type silicon substrate 5, the epitaxial layer 7 is made up, and side surface separating layers 9, 10 and the N<+> type ohmic layer 12 are built up. When inverse voltage is applied to the diode which uses the P type seprating layer as an anode and the N type epitaxial layer 7 as a cathode, the depletion layer 18 expands gradually to the epitaxial N layer 7, but expands along the side surface separating layers 9, 10 at first because the lower surface separating layers 15, 16, 17 are formed at intervals in the horizontal direction, and reaches the lower surface separating layer 16 and expands in the vertical direction. The depletion layer due to surge voltage does not reach the ohmic layer even in the thin epitaxial layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8234180A JPS577956A (en) | 1980-06-17 | 1980-06-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8234180A JPS577956A (en) | 1980-06-17 | 1980-06-17 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS577956A true JPS577956A (en) | 1982-01-16 |
Family
ID=13771855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8234180A Pending JPS577956A (en) | 1980-06-17 | 1980-06-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS577956A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064481A (en) * | 1983-09-19 | 1985-04-13 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-06-17 JP JP8234180A patent/JPS577956A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6064481A (en) * | 1983-09-19 | 1985-04-13 | Hitachi Ltd | Semiconductor device |
| JPH0516196B2 (en) * | 1983-09-19 | 1993-03-03 | Hitachi Ltd |
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