JPS6439074A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS6439074A
JPS6439074A JP19565187A JP19565187A JPS6439074A JP S6439074 A JPS6439074 A JP S6439074A JP 19565187 A JP19565187 A JP 19565187A JP 19565187 A JP19565187 A JP 19565187A JP S6439074 A JPS6439074 A JP S6439074A
Authority
JP
Japan
Prior art keywords
type
epitaxial growth
region
growth layer
mesfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19565187A
Other languages
Japanese (ja)
Inventor
Naoto Okazaki
Hiroshi Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP19565187A priority Critical patent/JPS6439074A/en
Publication of JPS6439074A publication Critical patent/JPS6439074A/en
Pending legal-status Critical Current

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  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To implement high integration density and to improve a yield rate, by forming a second conductivity type epitaxial growth layer, which is to become a P-N junction diode, on a first conductivity type region, which is to become the drain or source of a MESFET. CONSTITUTION:On a GaAs substrate 1, N<+> type regions 2 and 21, in which N-type impurities are implanted at a high concentration, are formed as the source and drain regions of a MESFET. An N-type active layer 5 is formed between said regions. A P-type epitaxial growth layer 22 including P-type impurities is formed as the anode of a diode on the upper surface of the N<+> type region 21. Ohmic electrodes 12 and 23 are formed on the N<+> type region 2 and the P-type epitaxial growth layer 22. A Schottky electrode 15 is formed on the N-type active layer 5. Namely, a P-N junction diode is implemented by the N<+> type region, which is to become the drain region of the MESFET, and the P-type epitaxial growth layer 22 thereon. Thus the high integration density is implemented and the yield rate is improved.
JP19565187A 1987-08-05 1987-08-05 Compound semiconductor device Pending JPS6439074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19565187A JPS6439074A (en) 1987-08-05 1987-08-05 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19565187A JPS6439074A (en) 1987-08-05 1987-08-05 Compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS6439074A true JPS6439074A (en) 1989-02-09

Family

ID=16344716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19565187A Pending JPS6439074A (en) 1987-08-05 1987-08-05 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS6439074A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186558A (en) * 2002-12-05 2004-07-02 Furukawa Electric Co Ltd:The GaN SYSTEM SEMICONDUCTOR DEVICE EQUIPPED WITH CURRENT BREAKER
JP2015008331A (en) * 2006-11-20 2015-01-15 パナソニック株式会社 Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004186558A (en) * 2002-12-05 2004-07-02 Furukawa Electric Co Ltd:The GaN SYSTEM SEMICONDUCTOR DEVICE EQUIPPED WITH CURRENT BREAKER
JP2015008331A (en) * 2006-11-20 2015-01-15 パナソニック株式会社 Semiconductor device

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