JPS6439074A - Compound semiconductor device - Google Patents
Compound semiconductor deviceInfo
- Publication number
- JPS6439074A JPS6439074A JP19565187A JP19565187A JPS6439074A JP S6439074 A JPS6439074 A JP S6439074A JP 19565187 A JP19565187 A JP 19565187A JP 19565187 A JP19565187 A JP 19565187A JP S6439074 A JPS6439074 A JP S6439074A
- Authority
- JP
- Japan
- Prior art keywords
- type
- epitaxial growth
- region
- growth layer
- mesfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To implement high integration density and to improve a yield rate, by forming a second conductivity type epitaxial growth layer, which is to become a P-N junction diode, on a first conductivity type region, which is to become the drain or source of a MESFET. CONSTITUTION:On a GaAs substrate 1, N<+> type regions 2 and 21, in which N-type impurities are implanted at a high concentration, are formed as the source and drain regions of a MESFET. An N-type active layer 5 is formed between said regions. A P-type epitaxial growth layer 22 including P-type impurities is formed as the anode of a diode on the upper surface of the N<+> type region 21. Ohmic electrodes 12 and 23 are formed on the N<+> type region 2 and the P-type epitaxial growth layer 22. A Schottky electrode 15 is formed on the N-type active layer 5. Namely, a P-N junction diode is implemented by the N<+> type region, which is to become the drain region of the MESFET, and the P-type epitaxial growth layer 22 thereon. Thus the high integration density is implemented and the yield rate is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19565187A JPS6439074A (en) | 1987-08-05 | 1987-08-05 | Compound semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19565187A JPS6439074A (en) | 1987-08-05 | 1987-08-05 | Compound semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6439074A true JPS6439074A (en) | 1989-02-09 |
Family
ID=16344716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19565187A Pending JPS6439074A (en) | 1987-08-05 | 1987-08-05 | Compound semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6439074A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004186558A (en) * | 2002-12-05 | 2004-07-02 | Furukawa Electric Co Ltd:The | GaN SYSTEM SEMICONDUCTOR DEVICE EQUIPPED WITH CURRENT BREAKER |
JP2015008331A (en) * | 2006-11-20 | 2015-01-15 | パナソニック株式会社 | Semiconductor device |
-
1987
- 1987-08-05 JP JP19565187A patent/JPS6439074A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004186558A (en) * | 2002-12-05 | 2004-07-02 | Furukawa Electric Co Ltd:The | GaN SYSTEM SEMICONDUCTOR DEVICE EQUIPPED WITH CURRENT BREAKER |
JP2015008331A (en) * | 2006-11-20 | 2015-01-15 | パナソニック株式会社 | Semiconductor device |
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