JPS6436078A - Field-effect transistor - Google Patents
Field-effect transistorInfo
- Publication number
- JPS6436078A JPS6436078A JP19015787A JP19015787A JPS6436078A JP S6436078 A JPS6436078 A JP S6436078A JP 19015787 A JP19015787 A JP 19015787A JP 19015787 A JP19015787 A JP 19015787A JP S6436078 A JPS6436078 A JP S6436078A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- layer
- rays
- alpha
- leakage current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To obtain a field effect transistor having a large resistance to alpha-rays by providing a high resistance material layer in contact with the lower part of the pad section of the gate electrode of an FET. CONSTITUTION:By an ion implantation onto a semi-insulating GaAs substrate 6 and a subsequent high-temperature heat treatment, a P-type semiconductor layer 11, an N-type active layer 7 and a N<+> layer 3 are formed. Then, an insulating film 2 is formed by the conventional CVD method in the extend under the gate electrode pad. The area of a Schottky diode formed by the direct contact of the pad section of a gate electrode 1 and the P-type semiconductor 11 can greatly be reduced by inserting the insulating layer 2 therebetween. Accordingly, the carriers generated by alpha-rays can be prevented from flowing into the gate electrode. Moreover, the gate leakage current due to the reverse leakage current of the Schottky diode can largely be controlled.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19015787A JPS6436078A (en) | 1987-07-31 | 1987-07-31 | Field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19015787A JPS6436078A (en) | 1987-07-31 | 1987-07-31 | Field-effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6436078A true JPS6436078A (en) | 1989-02-07 |
JPH046092B2 JPH046092B2 (en) | 1992-02-04 |
Family
ID=16253371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19015787A Granted JPS6436078A (en) | 1987-07-31 | 1987-07-31 | Field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6436078A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH039533A (en) * | 1989-06-07 | 1991-01-17 | Toshiba Corp | Schottky gate type field effect transistor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59112658A (en) * | 1982-12-20 | 1984-06-29 | Toshiba Corp | Field effect transistor and manufacture thereof |
JPS6189679A (en) * | 1984-10-09 | 1986-05-07 | Sony Corp | Manufacture of semiconductor |
-
1987
- 1987-07-31 JP JP19015787A patent/JPS6436078A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59112658A (en) * | 1982-12-20 | 1984-06-29 | Toshiba Corp | Field effect transistor and manufacture thereof |
JPS6189679A (en) * | 1984-10-09 | 1986-05-07 | Sony Corp | Manufacture of semiconductor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH039533A (en) * | 1989-06-07 | 1991-01-17 | Toshiba Corp | Schottky gate type field effect transistor |
Also Published As
Publication number | Publication date |
---|---|
JPH046092B2 (en) | 1992-02-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |