JPS6436078A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS6436078A
JPS6436078A JP19015787A JP19015787A JPS6436078A JP S6436078 A JPS6436078 A JP S6436078A JP 19015787 A JP19015787 A JP 19015787A JP 19015787 A JP19015787 A JP 19015787A JP S6436078 A JPS6436078 A JP S6436078A
Authority
JP
Japan
Prior art keywords
gate electrode
layer
rays
alpha
leakage current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19015787A
Other languages
Japanese (ja)
Other versions
JPH046092B2 (en
Inventor
Osamu Kagaya
Yasunari Umemoto
Hiroshi Yanagisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP19015787A priority Critical patent/JPS6436078A/en
Publication of JPS6436078A publication Critical patent/JPS6436078A/en
Publication of JPH046092B2 publication Critical patent/JPH046092B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a field effect transistor having a large resistance to alpha-rays by providing a high resistance material layer in contact with the lower part of the pad section of the gate electrode of an FET. CONSTITUTION:By an ion implantation onto a semi-insulating GaAs substrate 6 and a subsequent high-temperature heat treatment, a P-type semiconductor layer 11, an N-type active layer 7 and a N<+> layer 3 are formed. Then, an insulating film 2 is formed by the conventional CVD method in the extend under the gate electrode pad. The area of a Schottky diode formed by the direct contact of the pad section of a gate electrode 1 and the P-type semiconductor 11 can greatly be reduced by inserting the insulating layer 2 therebetween. Accordingly, the carriers generated by alpha-rays can be prevented from flowing into the gate electrode. Moreover, the gate leakage current due to the reverse leakage current of the Schottky diode can largely be controlled.
JP19015787A 1987-07-31 1987-07-31 Field-effect transistor Granted JPS6436078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19015787A JPS6436078A (en) 1987-07-31 1987-07-31 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19015787A JPS6436078A (en) 1987-07-31 1987-07-31 Field-effect transistor

Publications (2)

Publication Number Publication Date
JPS6436078A true JPS6436078A (en) 1989-02-07
JPH046092B2 JPH046092B2 (en) 1992-02-04

Family

ID=16253371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19015787A Granted JPS6436078A (en) 1987-07-31 1987-07-31 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6436078A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039533A (en) * 1989-06-07 1991-01-17 Toshiba Corp Schottky gate type field effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112658A (en) * 1982-12-20 1984-06-29 Toshiba Corp Field effect transistor and manufacture thereof
JPS6189679A (en) * 1984-10-09 1986-05-07 Sony Corp Manufacture of semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112658A (en) * 1982-12-20 1984-06-29 Toshiba Corp Field effect transistor and manufacture thereof
JPS6189679A (en) * 1984-10-09 1986-05-07 Sony Corp Manufacture of semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039533A (en) * 1989-06-07 1991-01-17 Toshiba Corp Schottky gate type field effect transistor

Also Published As

Publication number Publication date
JPH046092B2 (en) 1992-02-04

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term