JPS6322744U - - Google Patents
Info
- Publication number
- JPS6322744U JPS6322744U JP11590886U JP11590886U JPS6322744U JP S6322744 U JPS6322744 U JP S6322744U JP 11590886 U JP11590886 U JP 11590886U JP 11590886 U JP11590886 U JP 11590886U JP S6322744 U JPS6322744 U JP S6322744U
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- circuit device
- semiconductor integrated
- high concentration
- concentration impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 4
- 230000005669 field effect Effects 0.000 claims 2
- 238000005468 ion implantation Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Description
第１図ａ及びｂは本考案の実施例を説明するた
めのＦＥＴの平面図及びそのＸ―Ｘ断面図であり
、第２図はバツクゲート電極の電位とドレイン電
流との特性図である。
１……半絶縁性ＧａＡｓ基板、２……ｎ型活性
層、３……ゲート電極、４……ソース領域、５…
…ドレイン領域、６……シールド、７……ソース
電極、８……ドレイン電極。
FIGS. 1a and 1b are a plan view of an FET and a sectional view taken along the line X--X for explaining an embodiment of the present invention, and FIG. 2 is a characteristic diagram of the back gate electrode potential and drain current. DESCRIPTION OF SYMBOLS 1... Semi-insulating GaAs substrate, 2... N-type active layer, 3... Gate electrode, 4... Source region, 5...
...Drain region, 6...Shield, 7...Source electrode, 8...Drain electrode.
Claims (1)
が形成された半導体集積回路装置において、 前記半絶縁性半導体基板の主表面であつて前記
複数の素子のうち所定の素子の周りに電圧印加可
能な閉ループの高濃度不純物層を備えてなること
を特徴とする半導体集積回路装置。 (2) 前記所定の素子が電界効果トランジスタで
あることを特徴とする実用新案登録請求の範囲第
１項記載の半導体集積回路装置。 (3) 前記高濃度不純物層は前記電界効果トラン
ジスタのチヤンネル領域と同一導電型であること
を特徴とする実用新案登録請求の範囲第２項記載
の半導体集積回路装置。 (4) 前記高濃度不純物層が前記ソース領域と同
時に形成された不純物イオン注入層であることを
特徴とする実用新案登録請求の範囲第３項記載の
半導体集積回路装置。[Claims for Utility Model Registration] (1) In a semiconductor integrated circuit device in which a plurality of elements are formed on the main surface of a semi-insulating semiconductor substrate, A semiconductor integrated circuit device comprising a closed loop high concentration impurity layer around a predetermined element to which a voltage can be applied. (2) The semiconductor integrated circuit device according to claim 1, wherein the predetermined element is a field effect transistor. (3) The semiconductor integrated circuit device according to claim 2, wherein the high concentration impurity layer has the same conductivity type as the channel region of the field effect transistor. (4) The semiconductor integrated circuit device according to claim 3, wherein the high concentration impurity layer is an impurity ion implantation layer formed simultaneously with the source region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11590886U JPS6322744U (en) | 1986-07-30 | 1986-07-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11590886U JPS6322744U (en) | 1986-07-30 | 1986-07-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6322744U true JPS6322744U (en) | 1988-02-15 |
Family
ID=31000004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11590886U Pending JPS6322744U (en) | 1986-07-30 | 1986-07-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6322744U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02179031A (en) * | 1988-12-28 | 1990-07-12 | Mitsubishi Electric Corp | Semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59224174A (en) * | 1983-06-03 | 1984-12-17 | Hitachi Ltd | Gallium arsenide integrated circuit |
-
1986
- 1986-07-30 JP JP11590886U patent/JPS6322744U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59224174A (en) * | 1983-06-03 | 1984-12-17 | Hitachi Ltd | Gallium arsenide integrated circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02179031A (en) * | 1988-12-28 | 1990-07-12 | Mitsubishi Electric Corp | Semiconductor device |
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