JPS61158961U - - Google Patents
Info
- Publication number
- JPS61158961U JPS61158961U JP4288585U JP4288585U JPS61158961U JP S61158961 U JPS61158961 U JP S61158961U JP 4288585 U JP4288585 U JP 4288585U JP 4288585 U JP4288585 U JP 4288585U JP S61158961 U JPS61158961 U JP S61158961U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor
- conductivity type
- drain region
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Description
第１図は本考案に係る高耐圧ＭＯＳ―ＦＥＴの
断面の構成例を示した図、第２図は第１図の等価
回路を示す図、第３図は第４図の平面図、第４図
は従来のｎチヤネルの高耐圧ＭＯＳ―ＦＥＴの断
面図、第５図は領域１０と領域４の不純物濃度と
深さとの関係を示す図である。
１…基板、２…Ｐ＋領域、３…ｎ＋領域、４…
ｎ＋領域、５…ドリフトチヤネル、６…絶縁層、
７…ソース電極、８…ゲート電極、９…ドレイン
電極、１０…Ｐ−領域。
1 is a diagram showing an example of the cross-sectional configuration of a high voltage MOS-FET according to the present invention, FIG. 2 is a diagram showing an equivalent circuit of FIG. 1, and FIG. 3 is a plan view of FIG. The figure is a cross-sectional view of a conventional n-channel high voltage MOS-FET, and FIG. 5 is a diagram showing the relationship between the impurity concentration and depth of regions 10 and 4. DESCRIPTION OF SYMBOLS 1...Substrate, 2...P + area, 3...n + area, 4...
n + region, 5... drift channel, 6... insulating layer,
7... Source electrode, 8... Gate electrode, 9... Drain electrode, 10... P − region.
Claims (1)
有するプレーナ型のＦＥＴにおいて、 ドレイン領域の内部に基板の半導体と同じ伝導
型であり、不純物濃度が基板の半導体より高く、
かつ深さがドレイン接合よりも深い拡散層を有し
たことを特徴とする高耐圧ＭＯＳ―ＦＥＴ。[Claim for Utility Model Registration] In a planar FET in which the drain region has a conductivity type opposite to that of the semiconductor in the substrate, the drain region has the same conductivity type as the semiconductor in the substrate and has a higher impurity concentration than the semiconductor in the substrate. ,
A high voltage MOS-FET characterized in that it has a diffusion layer that is deeper than the drain junction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4288585U JPS61158961U (en) | 1985-03-25 | 1985-03-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4288585U JPS61158961U (en) | 1985-03-25 | 1985-03-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61158961U true JPS61158961U (en) | 1986-10-02 |
Family
ID=30554039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4288585U Pending JPS61158961U (en) | 1985-03-25 | 1985-03-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61158961U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56134773A (en) * | 1980-03-26 | 1981-10-21 | Nec Corp | Mos semiconductor device |
| JPS5969957A (en) * | 1982-10-15 | 1984-04-20 | Nec Corp | Protective device for output |
-
1985
- 1985-03-25 JP JP4288585U patent/JPS61158961U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56134773A (en) * | 1980-03-26 | 1981-10-21 | Nec Corp | Mos semiconductor device |
| JPS5969957A (en) * | 1982-10-15 | 1984-04-20 | Nec Corp | Protective device for output |
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