JPS61173148U - - Google Patents
Info
- Publication number
- JPS61173148U JPS61173148U JP5710985U JP5710985U JPS61173148U JP S61173148 U JPS61173148 U JP S61173148U JP 5710985 U JP5710985 U JP 5710985U JP 5710985 U JP5710985 U JP 5710985U JP S61173148 U JPS61173148 U JP S61173148U
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- region
- island region
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 claims 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Description
第１図は本考案による相補型電界効果トランジ
スタの一例の拡大断面図、第２図はそのＡ―Ａ線
からみた平面図、第３図及び第４図は夫々従来例
の拡大断面図である。
１は半導体基板、２は島領域、３及び４はソー
ス領域、４及び１４はドレイン領域、２３は高不
純物濃度領域である。
FIG. 1 is an enlarged sectional view of an example of a complementary field effect transistor according to the present invention, FIG. 2 is a plan view of the same as seen from line AA, and FIGS. 3 and 4 are enlarged sectional views of conventional examples, respectively. . 1 is a semiconductor substrate, 2 is an island region, 3 and 4 are source regions, 4 and 14 are drain regions, and 23 is a high impurity concentration region.
Claims (1)
１の電界効果トランジスタが形成され、端部に設
けられた第２の導電型の島領域に第２の電界効果
トランジスタが形成されて成る相補型電界効果ト
ランジスタにおいて (b) 上記島領域をとり囲み上記島領域より深く
高不純物濃度のキヤリア吸収領域が設けられて成
る相補型電界効果トランジスタ。[Claims for Utility Model Registration] (a) A first field effect transistor is formed in a partial region of a semiconductor substrate of a first conductivity type, and a first field effect transistor is formed in an island region of a second conductivity type provided at an end. (b) A complementary field effect transistor comprising a carrier absorption region of high impurity concentration surrounding the island region and deeper than the island region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5710985U JPS61173148U (en) | 1985-04-17 | 1985-04-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5710985U JPS61173148U (en) | 1985-04-17 | 1985-04-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61173148U true JPS61173148U (en) | 1986-10-28 |
Family
ID=30581331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5710985U Pending JPS61173148U (en) | 1985-04-17 | 1985-04-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61173148U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007115995A (en) * | 2005-10-21 | 2007-05-10 | Seiko Epson Corp | Semiconductor device |
| JP2009147378A (en) * | 2009-03-24 | 2009-07-02 | Mitsubishi Electric Corp | Semiconductor device |
-
1985
- 1985-04-17 JP JP5710985U patent/JPS61173148U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007115995A (en) * | 2005-10-21 | 2007-05-10 | Seiko Epson Corp | Semiconductor device |
| JP2009147378A (en) * | 2009-03-24 | 2009-07-02 | Mitsubishi Electric Corp | Semiconductor device |
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