JPS6192072U - - Google Patents

Info

Publication number
JPS6192072U
JPS6192072U JP17680884U JP17680884U JPS6192072U JP S6192072 U JPS6192072 U JP S6192072U JP 17680884 U JP17680884 U JP 17680884U JP 17680884 U JP17680884 U JP 17680884U JP S6192072 U JPS6192072 U JP S6192072U
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
semi
semiconductor layer
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17680884U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP17680884U priority Critical patent/JPS6192072U/ja
Publication of JPS6192072U publication Critical patent/JPS6192072U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の1実施例の電界効果トランジ
スタの平面図、第2図は従来の電界効果トランジ
スタの平面図である。 1…半絶縁性基板、2…n型半導体層、3…ソ
ース電極、4…ドレン電極、5…ゲート電極、6
…容量、7…負帰還回路。
FIG. 1 is a plan view of a field effect transistor according to an embodiment of the present invention, and FIG. 2 is a plan view of a conventional field effect transistor. DESCRIPTION OF SYMBOLS 1... Semi-insulating substrate, 2... N-type semiconductor layer, 3... Source electrode, 4... Drain electrode, 5... Gate electrode, 6
...Capacitance, 7...Negative feedback circuit.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半絶縁性基板と、該半絶縁性基板上に設けられ
た一導電型半導体層と、該一導電型半導体層上に
設けられたソース電極と、ドレン電極と、ゲート
電極とからなる電界効果トランジスタにおいて、
同一チツプ内に負帰還をかけるためのループ回路
を設けたことを特徴とする電界効果トランジスタ
A field effect transistor comprising a semi-insulating substrate, a semiconductor layer of one conductivity type provided on the semi-insulating substrate, a source electrode, a drain electrode, and a gate electrode provided on the semiconductor layer of one conductivity type. In,
A field effect transistor characterized by having a loop circuit for applying negative feedback within the same chip.
JP17680884U 1984-11-21 1984-11-21 Pending JPS6192072U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17680884U JPS6192072U (en) 1984-11-21 1984-11-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17680884U JPS6192072U (en) 1984-11-21 1984-11-21

Publications (1)

Publication Number Publication Date
JPS6192072U true JPS6192072U (en) 1986-06-14

Family

ID=30734392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17680884U Pending JPS6192072U (en) 1984-11-21 1984-11-21

Country Status (1)

Country Link
JP (1) JPS6192072U (en)

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