JPS6134755U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS6134755U JPS6134755U JP12071184U JP12071184U JPS6134755U JP S6134755 U JPS6134755 U JP S6134755U JP 12071184 U JP12071184 U JP 12071184U JP 12071184 U JP12071184 U JP 12071184U JP S6134755 U JPS6134755 U JP S6134755U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor equipment
- impurity concentration
- gate electrode
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【図面の簡単な説明】
第１図は本考案によるｎ形ＧａＡｓショットキバリアゲ
ート電界効果トランジスタの構造および空乏層の印加電
圧に対する変化状況を示す図、第２図は従来例について
の図である。
１・・・位加電圧対空乏層幅特性、２・・・半導体層厚
さ１、３・・・印加正弦波電圧、４・・・時間Ｔ対空乏
層幅ｔ特性、５・・・半絶縁性基板、６・・・半導体層
。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing the structure of an n-type GaAs Schottky barrier gate field effect transistor according to the present invention and how the depletion layer changes with applied voltage, and FIG. 2 is a diagram of a conventional example. 1... Applied voltage versus depletion layer width characteristic, 2... Semiconductor layer thickness 1, 3... Applied sinusoidal voltage, 4... Time T versus depletion layer width t characteristic, 5... Half Insulating substrate, 6... semiconductor layer.
Claims (1)
レイン電極とショットキバリアゲート電極とを配設した
電界効果トランジスタにおいて、前記半導体層のゲート
電極領域の不純物濃度が一様であり、該不純物濃度と前
記半導体層の厚さとの積を３ Ｘ １０１２ｃｍ−２以
下に設定することを特徴とする半導体装置。In a field effect transistor in which a source electrode, a drain electrode, and a Schottky barrier gate electrode are disposed on a semiconductor layer provided on a semi-insulating substrate, the impurity concentration in the gate electrode region of the semiconductor layer is uniform; A semiconductor device characterized in that a product of an impurity concentration and a thickness of the semiconductor layer is set to 3×10 12 cm −2 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12071184U JPS6134755U (en) | 1984-08-06 | 1984-08-06 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12071184U JPS6134755U (en) | 1984-08-06 | 1984-08-06 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6134755U true JPS6134755U (en) | 1986-03-03 |
Family
ID=30679524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12071184U Pending JPS6134755U (en) | 1984-08-06 | 1984-08-06 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6134755U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05506558A (en) * | 1990-06-13 | 1993-09-22 | シーメンス アクチエンゲゼルシヤフト | Interdigital transducer with finger width weighting for surface wave devices |
-
1984
- 1984-08-06 JP JP12071184U patent/JPS6134755U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05506558A (en) * | 1990-06-13 | 1993-09-22 | シーメンス アクチエンゲゼルシヤフト | Interdigital transducer with finger width weighting for surface wave devices |
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