JPS6099553U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS6099553U JPS6099553U JP16126884U JP16126884U JPS6099553U JP S6099553 U JPS6099553 U JP S6099553U JP 16126884 U JP16126884 U JP 16126884U JP 16126884 U JP16126884 U JP 16126884U JP S6099553 U JPS6099553 U JP S6099553U
- Authority
- JP
- Japan
- Prior art keywords
- source
- gate electrode
- drain contact
- semiconductor substrate
- contact regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図および第２図はショートチャンネル特性を説明す
る断面図およびグラフ、第３図は本考案 ・の実施例
を示す断面図、第４図は別途提案し−た素子の構造を示
す断面図である。
図面で４はゲート電極、２はソース領域、３はドレイン
領域、９はソースコンタクト領域、１０はドレインコン
タクト領域、５は絶縁膜、１は半導体基板、１１．１２
は高不純物濃度層である。Figures 1 and 2 are cross-sectional views and graphs explaining short channel characteristics, Figure 3 is a cross-sectional view showing an embodiment of the present invention, and Figure 4 is a cross-sectional view showing the structure of a separately proposed element. It is. In the drawing, 4 is a gate electrode, 2 is a source region, 3 is a drain region, 9 is a source contact region, 10 is a drain contact region, 5 is an insulating film, 1 is a semiconductor substrate, 11.12
is a high impurity concentration layer.
Claims (1)
極、該ゲート電極の両側に該ゲート電極より離して半導
体基板に形成されたソース、ドレイン各コンタクト領域
、該ゲート電極とソース、ドレイン各コンタクト領域と
の間の半導体基板表面の絶縁層に開口した窓を通して不
純物注入で半導体基板に形成され、ソース、ドレイン各
コンタクト領域より浅いソース、ドレイン各領及び該領
域の直下に形成された空乏層抑止用の高不純物濃度層を
備えることを特徴とする半導体装置。A gate electrode deposited on the surface of a semiconductor substrate via an insulating layer, source and drain contact regions formed on both sides of the gate electrode at a distance from the gate electrode, and a source and drain contact region between the gate electrode and the source and drain. A depletion layer formed in the semiconductor substrate by impurity implantation through a window opened in the insulating layer on the surface of the semiconductor substrate between the contact region and shallower than the source and drain contact regions and directly below the source and drain contact regions. A semiconductor device characterized by comprising a high impurity concentration layer for suppression.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16126884U JPS6099553U (en) | 1984-10-25 | 1984-10-25 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16126884U JPS6099553U (en) | 1984-10-25 | 1984-10-25 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6099553U true JPS6099553U (en) | 1985-07-06 |
Family
ID=30354467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16126884U Pending JPS6099553U (en) | 1984-10-25 | 1984-10-25 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6099553U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007049182A (en) * | 1999-12-16 | 2007-02-22 | Spinnaker Semiconductor Inc | System and method of mosfet device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49105495A (en) * | 1973-02-07 | 1974-10-05 | ||
| JPS508484A (en) * | 1973-05-21 | 1975-01-28 | ||
| JPS5023989A (en) * | 1973-07-02 | 1975-03-14 | ||
| JPS5121481A (en) * | 1974-08-14 | 1976-02-20 | Matsushita Electric Ind Co Ltd | Mos gatadenkaikokatoranjisuta |
-
1984
- 1984-10-25 JP JP16126884U patent/JPS6099553U/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49105495A (en) * | 1973-02-07 | 1974-10-05 | ||
| JPS508484A (en) * | 1973-05-21 | 1975-01-28 | ||
| JPS5023989A (en) * | 1973-07-02 | 1975-03-14 | ||
| JPS5121481A (en) * | 1974-08-14 | 1976-02-20 | Matsushita Electric Ind Co Ltd | Mos gatadenkaikokatoranjisuta |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007049182A (en) * | 1999-12-16 | 2007-02-22 | Spinnaker Semiconductor Inc | System and method of mosfet device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0510604A3 (en) | Semiconductor device and method of manufacturing the same | |
| JPH02140863U (en) | ||
| CA2051778A1 (en) | Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby | |
| JPS6099553U (en) | semiconductor equipment | |
| EP0401113A3 (en) | Semiconductor device and production method thereof | |
| JPH03101556U (en) | ||
| JPH02114670A (en) | Field effect transistor | |
| JPS5926265U (en) | semiconductor equipment | |
| JPS6142863U (en) | MOS semiconductor device | |
| JP2532471B2 (en) | Semiconductor device | |
| JPS59119045U (en) | High power high frequency transistor | |
| JPS6018558U (en) | thin film transistor element | |
| JPH02118954U (en) | ||
| JPS60166158U (en) | memory cell | |
| JPS6142860U (en) | Complementary MOS semiconductor device | |
| JPS5944056U (en) | charge transfer device | |
| JPH088356B2 (en) | Vertical field effect transistor | |
| JPS62109463U (en) | ||
| JPS60151147U (en) | semiconductor equipment | |
| JPS58129651U (en) | Junction field effect transistor | |
| JPS5999460U (en) | charge transfer device | |
| JPS59112944U (en) | integrated circuit | |
| JPS60125748U (en) | Lateral transistor | |
| JPS5945941U (en) | Shortcut barrier gate field effect transistor | |
| JPS6130260U (en) | Insulated gate field effect transistor |