JPS5944056U - charge transfer device - Google Patents
charge transfer deviceInfo
- Publication number
- JPS5944056U JPS5944056U JP13987582U JP13987582U JPS5944056U JP S5944056 U JPS5944056 U JP S5944056U JP 13987582 U JP13987582 U JP 13987582U JP 13987582 U JP13987582 U JP 13987582U JP S5944056 U JPS5944056 U JP S5944056U
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- transfer device
- charge transfer
- potential
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の電荷転送装置の例を示す断面図、第２図
及び第３図は従来の電荷転送装置の他の例を示す平面図
及びそのＡ−Ａ線上の断面図、第４図は従来の電荷転送
装置のさらに他の例を示す断面図、第５図は本考案によ
る電荷転送装置をフレームトランスファ方式の固体撮像
素子に適用した場合の平面図、第６図は第５図のＢ−Ｂ
線上の断面図（ポテンシャル図も含む）、第７図、第８
図及び第９図は第５図のＣ−Ｃ線上、Ｄ−Ｄ線上及びＥ
−Ｅ線上の各断面図である。
２１は半導体基体、２２はチャンネルストッパー領域、
−２３は埋込みチャンネル層、２４はゲート絶縁層、２
５は転送電極、２６は転送部、２７は表面電位を固定に
するための半導体領域である。
第４図
第１図 −−FIG. 1 is a sectional view showing an example of a conventional charge transfer device, FIGS. 2 and 3 are a plan view and a sectional view taken along the line A-A of the same, and FIG. 4 is a plan view showing other examples of the conventional charge transfer device. 5 is a cross-sectional view showing still another example of the conventional charge transfer device, FIG. 5 is a plan view of the charge transfer device according to the present invention applied to a frame transfer type solid-state image sensor, and FIG. B-B
Cross-sectional view on the line (including potential diagram), Figures 7 and 8
Figures and Figure 9 are on line C-C, line D-D and E in Figure 5.
-E line is each cross-sectional view. 21 is a semiconductor substrate, 22 is a channel stopper region,
-23 is a buried channel layer, 24 is a gate insulating layer, 2
5 is a transfer electrode, 26 is a transfer section, and 27 is a semiconductor region for fixing the surface potential. Figure 4 Figure 1 --
Claims (1)
該転送部にはチャンネルストッパー領域の電位の影響に
より転送の際有効となる非対称なポテンシャル井戸が転
送方向に形成され、上記各隅り合う転送電極の間に対応
する部分に該部分の表面電位を固定する領域が形成され
て成る電荷転送装置。A plurality of transfer parts each having a single-layer transfer electrode are arranged,
In the transfer section, an asymmetric potential well is formed in the transfer direction that becomes effective during transfer due to the influence of the potential of the channel stopper region, and the surface potential of the portion is applied to the corresponding portion between the corner transfer electrodes. A charge transfer device in which a fixing region is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13987582U JPS5944056U (en) | 1982-09-14 | 1982-09-14 | charge transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13987582U JPS5944056U (en) | 1982-09-14 | 1982-09-14 | charge transfer device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5944056U true JPS5944056U (en) | 1984-03-23 |
Family
ID=30313366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13987582U Pending JPS5944056U (en) | 1982-09-14 | 1982-09-14 | charge transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5944056U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03259570A (en) * | 1990-03-09 | 1991-11-19 | Mitsubishi Electric Corp | Solid-state image sensing device and manufacture thereof |
| JP2013531879A (en) * | 2010-05-18 | 2013-08-08 | ウードゥヴェ セミコンダクターズ | Asymmetric gate matrix charge transfer image sensor |
-
1982
- 1982-09-14 JP JP13987582U patent/JPS5944056U/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03259570A (en) * | 1990-03-09 | 1991-11-19 | Mitsubishi Electric Corp | Solid-state image sensing device and manufacture thereof |
| JP2013531879A (en) * | 2010-05-18 | 2013-08-08 | ウードゥヴェ セミコンダクターズ | Asymmetric gate matrix charge transfer image sensor |
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