JPS5954962U - light sensor - Google Patents

light sensor

Info

Publication number
JPS5954962U
JPS5954962U JP14972182U JP14972182U JPS5954962U JP S5954962 U JPS5954962 U JP S5954962U JP 14972182 U JP14972182 U JP 14972182U JP 14972182 U JP14972182 U JP 14972182U JP S5954962 U JPS5954962 U JP S5954962U
Authority
JP
Japan
Prior art keywords
photoconductive layer
light sensor
optical sensor
transparent electrode
abstract
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14972182U
Other languages
Japanese (ja)
Inventor
岩「淵」　俊之
野本　勉
章 内山
勝昭 坂本
Original Assignee
沖電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 沖電気工業株式会社 filed Critical 沖電気工業株式会社
Priority to JP14972182U priority Critical patent/JPS5954962U/en
Publication of JPS5954962U publication Critical patent/JPS5954962U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの考案の光センサの第１の実施例を示す断面
図、第２図はこの考案の第２の実施例を示す断面図であ
る。 ２．１４・・・金属電極、３，１３・・・光導電層、４
゜１２・・・透明電極。FIG. 1 is a sectional view showing a first embodiment of the optical sensor of this invention, and FIG. 2 is a sectional view showing a second embodiment of this invention. 2.14...Metal electrode, 3,13...Photoconductive layer, 4
゜12...Transparent electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 光導電層と、この光導電層の両面に分けて設けられる金
属電極および透明電極とを少なくとも有する光センサに
おいて、前記透明電極を前記光導電層と同様にアモルフ
ァスシリコン半導体材料で形成したことを特徴とする光
センサ。An optical sensor comprising at least a photoconductive layer and a metal electrode and a transparent electrode provided separately on both sides of the photoconductive layer, characterized in that the transparent electrode is formed of an amorphous silicon semiconductor material similarly to the photoconductive layer. Optical sensor.
JP14972182U 1982-10-04 1982-10-04 light sensor Pending JPS5954962U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14972182U JPS5954962U (en) 1982-10-04 1982-10-04 light sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14972182U JPS5954962U (en) 1982-10-04 1982-10-04 light sensor

Publications (1)

Publication Number Publication Date
JPS5954962U true JPS5954962U (en) 1984-04-10

Family

ID=30332273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14972182U Pending JPS5954962U (en) 1982-10-04 1982-10-04 light sensor

Country Status (1)

Country Link
JP (1) JPS5954962U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161752A (en) * 1985-01-11 1986-07-22 Ricoh Co Ltd Photoelectric conversion element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161752A (en) * 1985-01-11 1986-07-22 Ricoh Co Ltd Photoelectric conversion element

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