JPS59127250U

JPS59127250U - light sensor

Info

Publication number: JPS59127250U
Application number: JP2003183U
Authority: JP
Inventors: 野本　勉; 章内山; 上西　勝三
Original assignee: 沖電気工業株式会社
Priority date: 1983-02-16
Filing date: 1983-02-16
Publication date: 1984-08-27

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

第１図ａは従来の光センサの断面図、第１図すは第１図
ａの光センサの平面図、第２図ａは、この考案の光セン
サの一実施例の構成を示す断面図、第２図すは第２図ａ
の光センサの平面図、第３図ａはこの考案の光センサの
他の実施例の断面図、第３図すは第３図ａの光センサの
平面図である。１・・・透明絶縁物基板、２・・・透明電極、３ａ〜３
ｐ、２０３〜２０ｄ・・・高濃度不純物ドーピング膜、
４・・・非晶質シリコン半導体層、５・・・オーミック
コンタクト層、６・・・電極膜、１０．３０・・・開口
部。Figure 1a is a sectional view of a conventional optical sensor, Figure 1 is a plan view of the optical sensor of Figure 1a, and Figure 2a is a sectional view showing the configuration of an embodiment of the optical sensor of this invention. , Figure 2 is Figure 2 a
FIG. 3(a) is a sectional view of another embodiment of the optical sensor of this invention, and FIG. 3(a) is a plan view of the optical sensor of FIG. 3(a). 1... Transparent insulator substrate, 2... Transparent electrode, 3a-3
p, 203-20d...high concentration impurity doped film,
4... Amorphous silicon semiconductor layer, 5... Ohmic contact layer, 6... Electrode film, 10.30... Opening.

Claims

[Scope of utility model registration request]

a transparent electrode layer as a lower electrode; a highly doped impurity film formed on the transparent electrode layer and having an opening;
An optical sensor consisting of a light-receiving layer formed on this high-concentration impurity doped film, an ohmic contact layer formed on this light-receiving layer, and an electrode film forming an upper electrode formed on this ohmic contact layer. .