JPS58153464U - Amorphous semiconductor photodetector - Google Patents

Amorphous semiconductor photodetector

Info

Publication number
JPS58153464U
JPS58153464U JP5093582U JP5093582U JPS58153464U JP S58153464 U JPS58153464 U JP S58153464U JP 5093582 U JP5093582 U JP 5093582U JP 5093582 U JP5093582 U JP 5093582U JP S58153464 U JPS58153464 U JP S58153464U
Authority
JP
Japan
Prior art keywords
light
amorphous semiconductor
transmitting substrate
patterned
receiving region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5093582U
Other languages
Japanese (ja)
Other versions
JPS6211022Y2 (en
Inventor
岸　靖雄
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP5093582U priority Critical patent/JPS58153464U/en
Publication of JPS58153464U publication Critical patent/JPS58153464U/en
Application granted granted Critical
Publication of JPS6211022Y2 publication Critical patent/JPS6211022Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

図は本考案の一実施例を示し、第１図は断面図、第２図
は光入射方向から見た平面図で、１は透光性基板、２は
受光領域、１０は非晶質半導体膜、を夫々示している。The figures show an embodiment of the present invention, in which Fig. 1 is a cross-sectional view and Fig. 2 is a plan view seen from the direction of light incidence, where 1 is a transparent substrate, 2 is a light-receiving region, and 10 is an amorphous semiconductor. The membranes are shown respectively.

Claims (2)

【実用新案登録請求の範囲】[Scope of utility model registration request] （１）透光性基板、該基板の一生面に設けられた非晶質
半導体を含む受光領域、該受光領域とは別個に前記透光
性基板の一生面側に配置された非晶質半導体膜、から成
り、前記別個に配置された非晶質半導体膜を所望の文字
・記号・図形等の情報にパターニングし、このパターニ
ングされた情報を前記透光性基板を介して表示すること
を特徴とした非晶質半導体受光装置。(1) A light-transmitting substrate, a light-receiving region including an amorphous semiconductor provided on the whole surface of the substrate, and an amorphous semiconductor disposed on the whole surface of the light-transmitting substrate separately from the light-receiving region. The separately arranged amorphous semiconductor film is patterned into desired information such as characters, symbols, figures, etc., and the patterned information is displayed through the transparent substrate. Amorphous semiconductor photodetector. （２）前記パターニングされた非晶質半導体膜は前記透
光性基板と受光領域から前記透光性基板に延在した電極
端子との間に設けられたことを特徴とする実用新案登録
請求の範囲第１項記載の非晶質半導体受光装置。(2) The patterned amorphous semiconductor film is provided between the light-transmitting substrate and an electrode terminal extending from the light-receiving region to the light-transmitting substrate. The amorphous semiconductor light receiving device according to scope 1.
JP5093582U 1982-04-07 1982-04-07 Amorphous semiconductor photodetector Granted JPS58153464U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5093582U JPS58153464U (en) 1982-04-07 1982-04-07 Amorphous semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5093582U JPS58153464U (en) 1982-04-07 1982-04-07 Amorphous semiconductor photodetector

Publications (2)

Publication Number Publication Date
JPS58153464U true JPS58153464U (en) 1983-10-14
JPS6211022Y2 JPS6211022Y2 (en) 1987-03-16

Family

ID=30061713

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5093582U Granted JPS58153464U (en) 1982-04-07 1982-04-07 Amorphous semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS58153464U (en)

Also Published As

Publication number Publication date
JPS6211022Y2 (en) 1987-03-16

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