JPS6035551U - Amorphous silicon line sensor - Google Patents
Amorphous silicon line sensorInfo
- Publication number
- JPS6035551U JPS6035551U JP12689483U JP12689483U JPS6035551U JP S6035551 U JPS6035551 U JP S6035551U JP 12689483 U JP12689483 U JP 12689483U JP 12689483 U JP12689483 U JP 12689483U JP S6035551 U JPS6035551 U JP S6035551U
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- film
- line sensor
- light
- silicon line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
／ 第１図は、従来例の斜視図、第２図は、本考案ｋ
の一実施例の斜視図、第３図は、本考案の他の実施例
の断面図である。
−１１・・・光透過性絶縁基板、１２・・・遮光膜、１
３尺 ・・・共通電極膜、１４・・・絶縁膜、１５・・
・ｉ形アモル、 ファスシリコン膜、１６・・・ｎ形
アモルファスシリ七 コン膜、１７・・・個別電極膜
、１Ｂ・・べし形ガード） 電極膜。/ Figure 1 is a perspective view of the conventional example, Figure 2 is the present invention.
FIG. 3 is a perspective view of one embodiment of the present invention, and FIG. 3 is a sectional view of another embodiment of the present invention. -11... Light-transmissive insulating substrate, 12... Light-shielding film, 1
3 feet...Common electrode film, 14...Insulating film, 15...
・I-type amorphous silicon film, 16...n-type amorphous silicon film, 17...individual electrode film, 1B...beam-shaped guard) electrode film.
Claims (2)
縁膜、ｉ−ｎ形アモルファスシリコ〉膜、上部電極膜を
順次積層してなることを特徳とするアモルファスシリコ
ンラインセンサ。(1) An amorphous silicon line sensor characterized by sequentially stacking a light-transparent lower type film, an insulating film, an i-n type amorphous silicon film, and an upper electrode film on a light-transparent insulating substrate. .
共通電極とし、他方を、くし形ガード電右の各くし歯の
間にそれぞれ個別電極を配置しかつ、前記光透過性絶縁
基板に光の入射範囲４規制する実用新案登録請求の範囲
第（１）項記載σアモルファスシリコンラインセンサ。(2) One of the lower electrode film and the upper electrode film is used as a common electrode, and the other is arranged as an individual electrode between each comb tooth of the comb-shaped guard electrode, and the other is arranged on the light-transmissive insulating substrate. A σ amorphous silicon line sensor according to claim (1), which regulates the incident range of light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12689483U JPS6035551U (en) | 1983-08-18 | 1983-08-18 | Amorphous silicon line sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12689483U JPS6035551U (en) | 1983-08-18 | 1983-08-18 | Amorphous silicon line sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6035551U true JPS6035551U (en) | 1985-03-11 |
| JPH021866Y2 JPH021866Y2 (en) | 1990-01-17 |
Family
ID=30288384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12689483U Granted JPS6035551U (en) | 1983-08-18 | 1983-08-18 | Amorphous silicon line sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6035551U (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5349981A (en) * | 1976-10-18 | 1978-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric conversion element |
| JPS55104176A (en) * | 1979-02-06 | 1980-08-09 | Matsushita Electric Ind Co Ltd | Solidstate pick up unit |
| JPS5721876A (en) * | 1980-07-14 | 1982-02-04 | Canon Inc | Photosensor |
| JPS5897862A (en) * | 1981-12-08 | 1983-06-10 | Nec Corp | Close adhesion type image sensor |
-
1983
- 1983-08-18 JP JP12689483U patent/JPS6035551U/en active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5349981A (en) * | 1976-10-18 | 1978-05-06 | Nippon Telegr & Teleph Corp <Ntt> | Photoelectric conversion element |
| JPS55104176A (en) * | 1979-02-06 | 1980-08-09 | Matsushita Electric Ind Co Ltd | Solidstate pick up unit |
| JPS5721876A (en) * | 1980-07-14 | 1982-02-04 | Canon Inc | Photosensor |
| JPS5897862A (en) * | 1981-12-08 | 1983-06-10 | Nec Corp | Close adhesion type image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH021866Y2 (en) | 1990-01-17 |
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