JPS58144226U - light detection element - Google Patents
light detection elementInfo
- Publication number
- JPS58144226U JPS58144226U JP4101482U JP4101482U JPS58144226U JP S58144226 U JPS58144226 U JP S58144226U JP 4101482 U JP4101482 U JP 4101482U JP 4101482 U JP4101482 U JP 4101482U JP S58144226 U JPS58144226 U JP S58144226U
- Authority
- JP
- Japan
- Prior art keywords
- light
- amorphous silicon
- film
- detection element
- light detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Transform (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は、回転形光エンコ′−ダの構成図、第２図は、
従来の結晶シリコンを用いた光起電力タイテの光検出素
子の構成図、第３図Ａ、 Ｂ、 Ｃは、それぞれアモル
ファスシリコンを用いた光起電力形の光検出素子の断面
図、第４図および第５図は、それぞれ本考案の実施例の
光検出素子の断面図である。
１１・・・・・・透明基板、１２・・・・・・透光性導
電膜、１３・・・・・・アモルファスシリコン膜Ａ、１
４・・・・・・アモルファスシリコン膜Ｂ、１５・・・
・・・アモルファスシリコン膜Ｃ１１６・・・・・・金
属電極膜、１８・・・・・・光非透過膜。Fig. 1 is a configuration diagram of a rotary optical encoder, and Fig. 2 is a block diagram of a rotary optical encoder.
Figures 3A, B, and C are block diagrams of conventional photovoltaic type photodetecting elements using crystalline silicon, and Figure 4 are cross-sectional views of photovoltaic type photodetecting elements using amorphous silicon, respectively. and FIG. 5 are cross-sectional views of photodetecting elements according to embodiments of the present invention. 11...Transparent substrate, 12...Transparent conductive film, 13...Amorphous silicon film A, 1
4...Amorphous silicon film B, 15...
... Amorphous silicon film C116 ... Metal electrode film, 18 ... Light non-transmissive film.
Claims (1)
Ａ、 Ｂ、 Ｃおよび金属電極膜を順次積層してなる、
アモルファスシリコンの光起電力特性を利用したエンコ
ーダ用光検出素子において、前・ 記透明基板にお
ける前記光透過性導電膜との間、もしくは他方の面に、
光入射窓部を残して光非透過膜からなる遮光マスクを設
けたことを特徴とする光検出素子。A transparent conductive film, amorphous silicon films A, B, and C, and a metal electrode film are sequentially laminated on a transparent substrate.
In a photodetecting element for an encoder that utilizes the photovoltaic properties of amorphous silicon, between the transparent substrate and the light-transmitting conductive film, or on the other surface,
A photodetecting element characterized in that a light-shielding mask made of a non-light transmitting film is provided with a light entrance window remaining.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4101482U JPS58144226U (en) | 1982-03-25 | 1982-03-25 | light detection element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4101482U JPS58144226U (en) | 1982-03-25 | 1982-03-25 | light detection element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58144226U true JPS58144226U (en) | 1983-09-28 |
Family
ID=30052210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4101482U Pending JPS58144226U (en) | 1982-03-25 | 1982-03-25 | light detection element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58144226U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5648184A (en) * | 1979-09-26 | 1981-05-01 | Ricoh Co Ltd | Photoreading element |
-
1982
- 1982-03-25 JP JP4101482U patent/JPS58144226U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5648184A (en) * | 1979-09-26 | 1981-05-01 | Ricoh Co Ltd | Photoreading element |
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