JPS5648184A - Photoreading element - Google Patents
Photoreading elementInfo
- Publication number
- JPS5648184A JPS5648184A JP12359879A JP12359879A JPS5648184A JP S5648184 A JPS5648184 A JP S5648184A JP 12359879 A JP12359879 A JP 12359879A JP 12359879 A JP12359879 A JP 12359879A JP S5648184 A JPS5648184 A JP S5648184A
- Authority
- JP
- Japan
- Prior art keywords
- parts
- thin film
- forming
- electrode
- over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 abstract 4
- 239000010409 thin film Substances 0.000 abstract 4
- 150000004770 chalcogenides Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Optical Transform (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To provide an element of high density and long size in a simple process by forming light shielding walls and photocurrent take-out electrodes alternately on the surface of a transparent electrode and forming on them a hetero-junction over a long range. CONSTITUTION:Forming a metal layer 2 on the surface of a transparent substrate 1 and etching the layer 2, light shielding walls 3 and photocurrent take-out electrodes 4 are formed alternately. Parts where there is no wall 3 or electrode 4 pass light. As a result, the electrodes 4 are formed facing the parts which pass light. Next, a thin film 5 of a photoconductive material and further on it a thin film 6 of a material which forms a hetero-junction with an amorphous chalcogenide material and the photoconductive material are formed extending over a large area. On the thin film 6, an electrode 7 is formed. By so doing, light incident parts and nonincident parts can be formed very finely, therefore, the array of very fine photosensitive elements can be formed over a long range. In addition, the production process is simple; and since the elements are formed of thin films, their response is very fast.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12359879A JPS5648184A (en) | 1979-09-26 | 1979-09-26 | Photoreading element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12359879A JPS5648184A (en) | 1979-09-26 | 1979-09-26 | Photoreading element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5648184A true JPS5648184A (en) | 1981-05-01 |
| JPS6327871B2 JPS6327871B2 (en) | 1988-06-06 |
Family
ID=14864569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12359879A Granted JPS5648184A (en) | 1979-09-26 | 1979-09-26 | Photoreading element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5648184A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57189393A (en) * | 1981-05-18 | 1982-11-20 | Seiko Epson Corp | Semiconductor storage device |
| JPS5882564A (en) * | 1981-11-12 | 1983-05-18 | Fuji Xerox Co Ltd | Amorphous silicon photo receiving element |
| JPS58144226U (en) * | 1982-03-25 | 1983-09-28 | 東北リコ−株式会社 | light detection element |
| JPS58147094U (en) * | 1982-03-25 | 1983-10-03 | 東北リコ−株式会社 | light detection element |
| JP2005136392A (en) * | 2003-10-06 | 2005-05-26 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
-
1979
- 1979-09-26 JP JP12359879A patent/JPS5648184A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57189393A (en) * | 1981-05-18 | 1982-11-20 | Seiko Epson Corp | Semiconductor storage device |
| JPH0127520B2 (en) * | 1981-05-18 | 1989-05-29 | Seiko Epson Corp | |
| JPS5882564A (en) * | 1981-11-12 | 1983-05-18 | Fuji Xerox Co Ltd | Amorphous silicon photo receiving element |
| JPS58144226U (en) * | 1982-03-25 | 1983-09-28 | 東北リコ−株式会社 | light detection element |
| JPS58147094U (en) * | 1982-03-25 | 1983-10-03 | 東北リコ−株式会社 | light detection element |
| JP2005136392A (en) * | 2003-10-06 | 2005-05-26 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327871B2 (en) | 1988-06-06 |
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