JPS57194570A - Solid state image pick-up device and manufacture thereof - Google Patents

Solid state image pick-up device and manufacture thereof

Info

Publication number
JPS57194570A
JPS57194570A JP56079426A JP7942681A JPS57194570A JP S57194570 A JPS57194570 A JP S57194570A JP 56079426 A JP56079426 A JP 56079426A JP 7942681 A JP7942681 A JP 7942681A JP S57194570 A JPS57194570 A JP S57194570A
Authority
JP
Japan
Prior art keywords
image pick
solid state
state image
layer
amorphus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56079426A
Other languages
Japanese (ja)
Inventor
Okio Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56079426A priority Critical patent/JPS57194570A/en
Publication of JPS57194570A publication Critical patent/JPS57194570A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve the quality level of the solid state image pick-up device by a method wherein said device is provided with the crystal Si layer where the substrate with the self scanning element, signal load storage region, insulating layer and noncrystal Si are crystalized by means of the energy radiation. CONSTITUTION:The substrate 1 is provided with the self scanning element. When the contact hole with the n layer 11 is opened, the amorphus Si film 23 is formed. With said film 23 radiated from the laser light in the shape of spot, the amorphus Si is crystalized centering on the convex and cocave groove into the n type Si 23 to be the photoelectric conversion element. Through these procedures, the element with the high sensitivity and image pick-up capacity needless of the transparent electrode may be produced.
JP56079426A 1981-05-27 1981-05-27 Solid state image pick-up device and manufacture thereof Pending JPS57194570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56079426A JPS57194570A (en) 1981-05-27 1981-05-27 Solid state image pick-up device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56079426A JPS57194570A (en) 1981-05-27 1981-05-27 Solid state image pick-up device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57194570A true JPS57194570A (en) 1982-11-30

Family

ID=13689537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56079426A Pending JPS57194570A (en) 1981-05-27 1981-05-27 Solid state image pick-up device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57194570A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848578A (en) * 1981-09-17 1983-03-22 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPS59168780A (en) * 1983-03-15 1984-09-22 Agency Of Ind Science & Technol Image sensor cell
JPS59177963A (en) * 1983-03-28 1984-10-08 Nec Corp High-sensitivity solid-state image sensor
JPH0290678A (en) * 1988-08-10 1990-03-30 Philips Gloeilampenfab:Nv Frame transfer type image sensor device
JPH02168670A (en) * 1988-09-22 1990-06-28 Matsushita Electron Corp Solid-state image sensing device and manufacture thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848578A (en) * 1981-09-17 1983-03-22 Matsushita Electric Ind Co Ltd Solid-state image pickup device
JPH0316833B2 (en) * 1981-09-17 1991-03-06 Matsushita Electric Ind Co Ltd
JPS59168780A (en) * 1983-03-15 1984-09-22 Agency Of Ind Science & Technol Image sensor cell
JPS59177963A (en) * 1983-03-28 1984-10-08 Nec Corp High-sensitivity solid-state image sensor
JPH0290678A (en) * 1988-08-10 1990-03-30 Philips Gloeilampenfab:Nv Frame transfer type image sensor device
JPH02168670A (en) * 1988-09-22 1990-06-28 Matsushita Electron Corp Solid-state image sensing device and manufacture thereof

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