JPS54103630A - Solid state pickup device - Google Patents

Solid state pickup device

Info

Publication number
JPS54103630A
JPS54103630A JP1098778A JP1098778A JPS54103630A JP S54103630 A JPS54103630 A JP S54103630A JP 1098778 A JP1098778 A JP 1098778A JP 1098778 A JP1098778 A JP 1098778A JP S54103630 A JPS54103630 A JP S54103630A
Authority
JP
Japan
Prior art keywords
electrode
region
solid state
high sensitivity
pickup device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1098778A
Other languages
Japanese (ja)
Other versions
JPS6042666B2 (en
Inventor
Takao Chikamura
Shinji Fujiwara
Shoichi Fukai
Yasuaki Terui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP53010987A priority Critical patent/JPS6042666B2/en
Priority to US06/006,129 priority patent/US4236829A/en
Priority to GB7903077A priority patent/GB2014783B/en
Priority to DE2903651A priority patent/DE2903651C2/en
Priority to FR7902477A priority patent/FR2416554A1/en
Publication of JPS54103630A publication Critical patent/JPS54103630A/en
Publication of JPS6042666B2 publication Critical patent/JPS6042666B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To obtain a solid state pickup device featuring a high S/N and high sensitivity by forming the hetero-junction which features an extremely high sensitivity and a reduced amount of the dark current on the charge transfer type solid state element on the semiconductor substrate.
CONSTITUTION: The n+-type region 11 is formed on p-type semiconductor substrate 10, and the diode is provided. Potential barrier 12 blocks the injection of the electron from region 11 in case CCD is operating at the p+-type region. Now if the light enters from electrode 21, the electron positive hole pair is grown by photoconductor 19 which is composed of (Zn1-xCdxTe)1-y(In2Te3)7 and features an extremely high sensitivity and a reduced amount of the dark current. The hole pair arrive at electrode 18 and 21 each to lower the potential of electrode 18. Furthermore, reading pulse VCH is applied to 1st gate electrode 14, and thus the surface potential under electrode 14 rises up. And then the electron is injected to region 13 from region 11 and then supplied to combined capacity CB which is formed with substrate 10 and electrode 14, and the total amount of the transferred charge corresponds to the luminous intensity of the incident rays. As a result, a solid state pickup device can be obtained with a high S/N and high sensitivity.
COPYRIGHT: (C)1979,JPO&Japio
JP53010987A 1978-01-31 1978-02-01 solid state imaging device Expired JPS6042666B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP53010987A JPS6042666B2 (en) 1978-02-01 1978-02-01 solid state imaging device
US06/006,129 US4236829A (en) 1978-01-31 1979-01-24 Solid-state image sensor
GB7903077A GB2014783B (en) 1978-01-31 1979-01-29 Solid-state image sensor
DE2903651A DE2903651C2 (en) 1978-01-31 1979-01-31 Solid state image sensing device
FR7902477A FR2416554A1 (en) 1978-01-31 1979-01-31 SOLID STATE SHOOTING DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53010987A JPS6042666B2 (en) 1978-02-01 1978-02-01 solid state imaging device

Publications (2)

Publication Number Publication Date
JPS54103630A true JPS54103630A (en) 1979-08-15
JPS6042666B2 JPS6042666B2 (en) 1985-09-24

Family

ID=11765493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53010987A Expired JPS6042666B2 (en) 1978-01-31 1978-02-01 solid state imaging device

Country Status (1)

Country Link
JP (1) JPS6042666B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630373A (en) * 1979-08-20 1981-03-26 Matsushita Electric Ind Co Ltd Solid image pickup unit
JPS5679937U (en) * 1979-11-25 1981-06-29
JPS5698881A (en) * 1980-01-08 1981-08-08 Matsushita Electric Ind Co Ltd Solid-state camera equipment
JPS56102169A (en) * 1980-01-18 1981-08-15 Matsushita Electric Ind Co Ltd Solid image pickup device
JPS56129379A (en) * 1980-03-12 1981-10-09 Matsushita Electric Ind Co Ltd Solid image-pickup element and manufacture
JPS6455859A (en) * 1987-08-27 1989-03-02 Mitsubishi Electric Corp Superlattice image sensing

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5630373A (en) * 1979-08-20 1981-03-26 Matsushita Electric Ind Co Ltd Solid image pickup unit
JPS5679937U (en) * 1979-11-25 1981-06-29
JPS5698881A (en) * 1980-01-08 1981-08-08 Matsushita Electric Ind Co Ltd Solid-state camera equipment
JPS56102169A (en) * 1980-01-18 1981-08-15 Matsushita Electric Ind Co Ltd Solid image pickup device
JPS56129379A (en) * 1980-03-12 1981-10-09 Matsushita Electric Ind Co Ltd Solid image-pickup element and manufacture
JPS6455859A (en) * 1987-08-27 1989-03-02 Mitsubishi Electric Corp Superlattice image sensing

Also Published As

Publication number Publication date
JPS6042666B2 (en) 1985-09-24

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