JPS5586274A - Charge transfer pickup unit and its driving method - Google Patents

Charge transfer pickup unit and its driving method

Info

Publication number
JPS5586274A
JPS5586274A JP16384378A JP16384378A JPS5586274A JP S5586274 A JPS5586274 A JP S5586274A JP 16384378 A JP16384378 A JP 16384378A JP 16384378 A JP16384378 A JP 16384378A JP S5586274 A JPS5586274 A JP S5586274A
Authority
JP
Japan
Prior art keywords
electrode
potential
region
well
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16384378A
Other languages
Japanese (ja)
Other versions
JPS6318387B2 (en
Inventor
Yasuo Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16384378A priority Critical patent/JPS5586274A/en
Publication of JPS5586274A publication Critical patent/JPS5586274A/en
Publication of JPS6318387B2 publication Critical patent/JPS6318387B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prevent a blooming phenomenon and also to improve a degree of integration by connecting an excessive charge absorbing channel, adjoining to a photoelectric conversion region and divided by a channel stop region, to a gate electrode forming a potential well.
CONSTITUTION: To photo gate 15, a direct current is applied to form a potential well of photoelectric conversion regions 18a and 18b. Once control gate electrode 14 becomes high in level, a potential under electrode 14 becomes 17b and charge in photoelectric conversion part 18 is transferred to potential well 17c right under transfer electrode 13a. When electrode 14 becomes low in level, a potential right under electrode 14 becomes 17b'. Irradiation with light via photo gate 15 accumulates signal charge in the potential well encircled with 17b and 17a. Potential barrier region 19 controls the impurity density of the substrate and decreases an electron potential in the well down to a minimum with electrode 15 biased. Therefore, the excessive charge flows into excessive-charge absorbing N+ region 16 by way of region 19. In this way, electrode 15 controls the surface potential of region 19 while forming the well, and is connected to region 16 via contact 20, thereby realizing a function of an electrode line through which the excessive charge flows out.
COPYRIGHT: (C)1980,JPO&Japio
JP16384378A 1978-12-22 1978-12-22 Charge transfer pickup unit and its driving method Granted JPS5586274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16384378A JPS5586274A (en) 1978-12-22 1978-12-22 Charge transfer pickup unit and its driving method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16384378A JPS5586274A (en) 1978-12-22 1978-12-22 Charge transfer pickup unit and its driving method

Publications (2)

Publication Number Publication Date
JPS5586274A true JPS5586274A (en) 1980-06-28
JPS6318387B2 JPS6318387B2 (en) 1988-04-18

Family

ID=15781797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16384378A Granted JPS5586274A (en) 1978-12-22 1978-12-22 Charge transfer pickup unit and its driving method

Country Status (1)

Country Link
JP (1) JPS5586274A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726971A (en) * 1980-07-24 1982-02-13 Sanyo Electric Co Ltd Solidstate image sensor
JPS5768070A (en) * 1980-10-16 1982-04-26 Sony Corp Charge transfer device
JPS5793568A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor image pickup element
JPS57109476A (en) * 1980-12-25 1982-07-07 Matsushita Electronics Corp Solid image pickup device
US4905033A (en) * 1987-01-06 1990-02-27 Minolta Camera Kabushiki Kaisha Image sensing system
US4985774A (en) * 1988-01-20 1991-01-15 Minolta Camera Kabushiki Kaisha Image sensing device having direct drainage of unwanted charges
US5227834A (en) * 1987-01-06 1993-07-13 Minolta Camera Kabushiki Kaisha Image sensing system having a one chip solid state image device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5020679A (en) * 1973-05-21 1975-03-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5020679A (en) * 1973-05-21 1975-03-05

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726971A (en) * 1980-07-24 1982-02-13 Sanyo Electric Co Ltd Solidstate image sensor
JPS5768070A (en) * 1980-10-16 1982-04-26 Sony Corp Charge transfer device
JPS5793568A (en) * 1980-12-02 1982-06-10 Nec Corp Semiconductor image pickup element
JPS6320385B2 (en) * 1980-12-02 1988-04-27 Nippon Electric Co
JPS57109476A (en) * 1980-12-25 1982-07-07 Matsushita Electronics Corp Solid image pickup device
US4905033A (en) * 1987-01-06 1990-02-27 Minolta Camera Kabushiki Kaisha Image sensing system
US5010409A (en) * 1987-01-06 1991-04-23 Minolta Camera Kabushiki Kaisha Image sensing system
US5097339A (en) * 1987-01-06 1992-03-17 Minolta Camera Kabushiki Kaisha Single chip solid state image sensing devices
US5227834A (en) * 1987-01-06 1993-07-13 Minolta Camera Kabushiki Kaisha Image sensing system having a one chip solid state image device
US5371567A (en) * 1987-01-06 1994-12-06 Minolta Camera Kabushiki Kaisha Image sensing system
US5469239A (en) * 1987-01-06 1995-11-21 Minolta Camera Kabushiki Kaisha Image sensing system
US4985774A (en) * 1988-01-20 1991-01-15 Minolta Camera Kabushiki Kaisha Image sensing device having direct drainage of unwanted charges

Also Published As

Publication number Publication date
JPS6318387B2 (en) 1988-04-18

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