JPS5768070A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5768070A
JPS5768070A JP14472380A JP14472380A JPS5768070A JP S5768070 A JPS5768070 A JP S5768070A JP 14472380 A JP14472380 A JP 14472380A JP 14472380 A JP14472380 A JP 14472380A JP S5768070 A JPS5768070 A JP S5768070A
Authority
JP
Japan
Prior art keywords
channel
ccd unit
passage
transfer efficiency
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14472380A
Other languages
Japanese (ja)
Inventor
Tetsuo Kumezawa
Takeo Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP14472380A priority Critical patent/JPS5768070A/en
Publication of JPS5768070A publication Critical patent/JPS5768070A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent the decrease in the efficiency of a charge transfer device by sufficiently decreasing the length of a channel passage in a narrow part between the partial channel stoppers of low transfer efficiency, thereby alleviating the influence of the potential of the channel stopper. CONSTITUTION:An N type epitaxial layer 2 is superposed on a P type substrate 1, and channel stoppers 8a, 8b are formed across a semiconductor layer 7. Transfer electrodes 9A, 9B forming a series CCD unit 1 and a gate electrode 2 (9C) provided between the series CCD unit 1 and a parallel CCD unit 3 are formed of different conductive layers through an insulating layer 10 on the substrate S, and are superposed via an insulating film, thereby sufficiently shortening the length L of the passage (a) between the channel passage of the series CCD unit 1 and the channel passage under the gate electrode 2. Accordingly, the part affected by the influence of the potential of the channel stopper 8b is shortened to prevent the transfer efficiency decrease, and to reduce the irregularity in the transfer efficiency simultaneously.
JP14472380A 1980-10-16 1980-10-16 Charge transfer device Pending JPS5768070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14472380A JPS5768070A (en) 1980-10-16 1980-10-16 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14472380A JPS5768070A (en) 1980-10-16 1980-10-16 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS5768070A true JPS5768070A (en) 1982-04-26

Family

ID=15368812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14472380A Pending JPS5768070A (en) 1980-10-16 1980-10-16 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS5768070A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528594A (en) * 1983-04-20 1985-07-09 Xerox Corporation High resolution quadrilinear CCD imager

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356945A (en) * 1976-10-29 1978-05-23 Texas Instruments Inc Electric charge coupling device storage
JPS5487080A (en) * 1977-12-05 1979-07-11 Rockwell International Corp Image sensor
JPS5586274A (en) * 1978-12-22 1980-06-28 Nec Corp Charge transfer pickup unit and its driving method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5356945A (en) * 1976-10-29 1978-05-23 Texas Instruments Inc Electric charge coupling device storage
JPS5487080A (en) * 1977-12-05 1979-07-11 Rockwell International Corp Image sensor
JPS5586274A (en) * 1978-12-22 1980-06-28 Nec Corp Charge transfer pickup unit and its driving method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4528594A (en) * 1983-04-20 1985-07-09 Xerox Corporation High resolution quadrilinear CCD imager

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