JPS52144284A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52144284A
JPS52144284A JP6197776A JP6197776A JPS52144284A JP S52144284 A JPS52144284 A JP S52144284A JP 6197776 A JP6197776 A JP 6197776A JP 6197776 A JP6197776 A JP 6197776A JP S52144284 A JPS52144284 A JP S52144284A
Authority
JP
Japan
Prior art keywords
semiconductor device
electrodes
insulating layer
gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6197776A
Other languages
Japanese (ja)
Other versions
JPS6142874B2 (en
Inventor
Eiichi Takeuchi
Hiromitsu Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6197776A priority Critical patent/JPS52144284A/en
Publication of JPS52144284A publication Critical patent/JPS52144284A/en
Publication of JPS6142874B2 publication Critical patent/JPS6142874B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To provide a semiconductor device which can respond even to a higher clock frequency and possesses linearity by interposing first, second and third gate electrodes between an input diode and a group of charge-transfer electrodes, disposing one electrode close to the third gate on an insulating layer on a semiconductor substrate and arranging the remaining electrodes on an insulating layer on the reverse conduction type layer mounted to the substrate.
JP6197776A 1976-05-27 1976-05-27 Semiconductor device Granted JPS52144284A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6197776A JPS52144284A (en) 1976-05-27 1976-05-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6197776A JPS52144284A (en) 1976-05-27 1976-05-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS52144284A true JPS52144284A (en) 1977-12-01
JPS6142874B2 JPS6142874B2 (en) 1986-09-24

Family

ID=13186737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6197776A Granted JPS52144284A (en) 1976-05-27 1976-05-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52144284A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5412799U (en) * 1977-06-27 1979-01-27
JPS5553458A (en) * 1978-10-16 1980-04-18 Nec Corp Charge coupled element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5412799U (en) * 1977-06-27 1979-01-27
JPS5553458A (en) * 1978-10-16 1980-04-18 Nec Corp Charge coupled element

Also Published As

Publication number Publication date
JPS6142874B2 (en) 1986-09-24

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