JPS5427777A - Insulated gate type semiconductor device - Google Patents

Insulated gate type semiconductor device

Info

Publication number
JPS5427777A
JPS5427777A JP9350777A JP9350777A JPS5427777A JP S5427777 A JPS5427777 A JP S5427777A JP 9350777 A JP9350777 A JP 9350777A JP 9350777 A JP9350777 A JP 9350777A JP S5427777 A JPS5427777 A JP S5427777A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
insulated gate
gate type
same substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9350777A
Other languages
Japanese (ja)
Other versions
JPS6123671B2 (en
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9350777A priority Critical patent/JPS5427777A/en
Publication of JPS5427777A publication Critical patent/JPS5427777A/en
Publication of JPS6123671B2 publication Critical patent/JPS6123671B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

PURPOSE:To make possible obtaining different threshold voltages within the same substrate by so providing first, second gate electrodes as to cross by way of an insulating film within a semiconductor device having a plurality of insulated gates on the same substrate.
JP9350777A 1977-08-03 1977-08-03 Insulated gate type semiconductor device Granted JPS5427777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9350777A JPS5427777A (en) 1977-08-03 1977-08-03 Insulated gate type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9350777A JPS5427777A (en) 1977-08-03 1977-08-03 Insulated gate type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5427777A true JPS5427777A (en) 1979-03-02
JPS6123671B2 JPS6123671B2 (en) 1986-06-06

Family

ID=14084252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9350777A Granted JPS5427777A (en) 1977-08-03 1977-08-03 Insulated gate type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5427777A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153167A (en) * 1984-01-20 1985-08-12 Matsushita Electronics Corp Semiconductor ic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60153167A (en) * 1984-01-20 1985-08-12 Matsushita Electronics Corp Semiconductor ic

Also Published As

Publication number Publication date
JPS6123671B2 (en) 1986-06-06

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