JPS52124876A - Insulated gate type field effect semiconductor - Google Patents

Insulated gate type field effect semiconductor

Info

Publication number
JPS52124876A
JPS52124876A JP4085576A JP4085576A JPS52124876A JP S52124876 A JPS52124876 A JP S52124876A JP 4085576 A JP4085576 A JP 4085576A JP 4085576 A JP4085576 A JP 4085576A JP S52124876 A JPS52124876 A JP S52124876A
Authority
JP
Japan
Prior art keywords
field effect
type field
insulated gate
gate type
effect semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4085576A
Other languages
Japanese (ja)
Inventor
Ikuo Anada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP4085576A priority Critical patent/JPS52124876A/en
Publication of JPS52124876A publication Critical patent/JPS52124876A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Abstract

PURPOSE:To increase the scale of integration by limiting the width of at least one of channel regions with the gate electrodes on a gate insulation film.
JP4085576A 1976-04-13 1976-04-13 Insulated gate type field effect semiconductor Pending JPS52124876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4085576A JPS52124876A (en) 1976-04-13 1976-04-13 Insulated gate type field effect semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4085576A JPS52124876A (en) 1976-04-13 1976-04-13 Insulated gate type field effect semiconductor

Publications (1)

Publication Number Publication Date
JPS52124876A true JPS52124876A (en) 1977-10-20

Family

ID=12592162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4085576A Pending JPS52124876A (en) 1976-04-13 1976-04-13 Insulated gate type field effect semiconductor

Country Status (1)

Country Link
JP (1) JPS52124876A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444875A (en) * 1977-09-16 1979-04-09 Nec Corp Field effect semiconductor device of insulation gate type

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3874937A (en) * 1973-10-31 1975-04-01 Gen Instrument Corp Method for manufacturing metal oxide semiconductor integrated circuit of reduced size
US3922704A (en) * 1973-10-31 1975-11-25 Gen Instrument Corp Metal oxide semiconductor integrated circuit of reduced size and a method for manufacturing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3874937A (en) * 1973-10-31 1975-04-01 Gen Instrument Corp Method for manufacturing metal oxide semiconductor integrated circuit of reduced size
US3922704A (en) * 1973-10-31 1975-11-25 Gen Instrument Corp Metal oxide semiconductor integrated circuit of reduced size and a method for manufacturing same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444875A (en) * 1977-09-16 1979-04-09 Nec Corp Field effect semiconductor device of insulation gate type
JPS6018150B2 (en) * 1977-09-16 1985-05-09 日本電気株式会社 Insulated gate field effect semiconductor device

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