JPS51122382A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51122382A
JPS51122382A JP4718775A JP4718775A JPS51122382A JP S51122382 A JPS51122382 A JP S51122382A JP 4718775 A JP4718775 A JP 4718775A JP 4718775 A JP4718775 A JP 4718775A JP S51122382 A JPS51122382 A JP S51122382A
Authority
JP
Japan
Prior art keywords
semiconductor device
sos
shortened
leakage current
channel length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4718775A
Other languages
Japanese (ja)
Inventor
Yoshiiku Togei
Toru Inaba
Kunihiko Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4718775A priority Critical patent/JPS51122382A/en
Publication of JPS51122382A publication Critical patent/JPS51122382A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent leakage current, the channel length is shortened by the vertical type construction of SOS and most.
JP4718775A 1975-04-18 1975-04-18 Semiconductor device Pending JPS51122382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4718775A JPS51122382A (en) 1975-04-18 1975-04-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4718775A JPS51122382A (en) 1975-04-18 1975-04-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51122382A true JPS51122382A (en) 1976-10-26

Family

ID=12768087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4718775A Pending JPS51122382A (en) 1975-04-18 1975-04-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51122382A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564284A (en) * 1979-06-25 1981-01-17 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor and manufacture thereof
JPS567481A (en) * 1979-06-29 1981-01-26 Ibm Field effect type transistor
JPS56115571A (en) * 1979-12-13 1981-09-10 Energy Conversion Devices Inc Thin film transistor
JPS57115868A (en) * 1981-01-09 1982-07-19 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and manufacture thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4989492A (en) * 1972-12-26 1974-08-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4989492A (en) * 1972-12-26 1974-08-27

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS564284A (en) * 1979-06-25 1981-01-17 Nippon Telegr & Teleph Corp <Ntt> Field effect transistor and manufacture thereof
JPS567481A (en) * 1979-06-29 1981-01-26 Ibm Field effect type transistor
JPS56115571A (en) * 1979-12-13 1981-09-10 Energy Conversion Devices Inc Thin film transistor
JPS57115868A (en) * 1981-01-09 1982-07-19 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and manufacture thereof

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