JPS564284A - Field effect transistor and manufacture thereof - Google Patents
Field effect transistor and manufacture thereofInfo
- Publication number
- JPS564284A JPS564284A JP8051779A JP8051779A JPS564284A JP S564284 A JPS564284 A JP S564284A JP 8051779 A JP8051779 A JP 8051779A JP 8051779 A JP8051779 A JP 8051779A JP S564284 A JPS564284 A JP S564284A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- type
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010410 layer Substances 0.000 abstract 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Abstract
PURPOSE:To increase the mutual conductance of a field effect transistor without increasing the size of the transistor by forming source and drain regions forming the FET in laminated layer, then forming them in bevel state, and mounting gate electrodes through a gate insulating film on the inclined side surfaces. CONSTITUTION:An N<+>-type buried region 23 is diffused on a P-type Si substrate 22, an N<->-type source layer 34 is epitaxially grown on the entire surface thereof, and an N<+>-type drain layer 35 is diffused on the surface layer. Then, the layers 35, 34 are etched in bevel state, and an SiO2 film 25 is coated on the substrate 22 including the surface of the substrate 22 and the surface of the region 23 surrounding the layers 35, 34. Thereafter, a conductive layer 42 surrounded by the SiO2 film 37, 42 is formed on the side surface inclined in bevel state, and a gate electrode 42 buried in the SiO2 films 36', 42 is formed thereon, a wiring layer 45 is mounted on the region 23 and a wiring layer 47 is mounted on the eletrode 42, and the wiring layer 46 is mounted on the layer 35. In this manner the voltage applied to the region 23 and the electrode 42 is controlled to provide an FET having large gm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8051779A JPS564284A (en) | 1979-06-25 | 1979-06-25 | Field effect transistor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8051779A JPS564284A (en) | 1979-06-25 | 1979-06-25 | Field effect transistor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS564284A true JPS564284A (en) | 1981-01-17 |
Family
ID=13720495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8051779A Pending JPS564284A (en) | 1979-06-25 | 1979-06-25 | Field effect transistor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS564284A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0510604A2 (en) * | 1991-04-23 | 1992-10-28 | Canon Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51122382A (en) * | 1975-04-18 | 1976-10-26 | Fujitsu Ltd | Semiconductor device |
-
1979
- 1979-06-25 JP JP8051779A patent/JPS564284A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51122382A (en) * | 1975-04-18 | 1976-10-26 | Fujitsu Ltd | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0510604A2 (en) * | 1991-04-23 | 1992-10-28 | Canon Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
| EP0510604A3 (en) * | 1991-04-23 | 2001-05-09 | Canon Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
| US6373099B1 (en) | 1991-04-23 | 2002-04-16 | Canon Kabushiki Kaisha | Method of manufacturing a surrounding gate type MOFSET |
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