JPS6433971A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS6433971A
JPS6433971A JP62188897A JP18889787A JPS6433971A JP S6433971 A JPS6433971 A JP S6433971A JP 62188897 A JP62188897 A JP 62188897A JP 18889787 A JP18889787 A JP 18889787A JP S6433971 A JPS6433971 A JP S6433971A
Authority
JP
Japan
Prior art keywords
holes
drain electrode
source electrode
film
slope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62188897A
Other languages
Japanese (ja)
Inventor
Masaya Keyakida
Masaki Yuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Priority to JP62188897A priority Critical patent/JPS6433971A/en
Publication of JPS6433971A publication Critical patent/JPS6433971A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

PURPOSE:To suppress disconnection in the through holes so as to enable electrical contact of both a source electrode and a drain electrode to be performed perfectly although both the source electrode and the drain electrode are thin, by making each of the internal surface of the through holes bored through insulating films covering a semiconductor film a slope. CONSTITUTION:In a field effect thin film transistor in which through holes 7 are bored through both insulating films 4 and 6 covering a semiconductor film 3 to perform electrical contact of both a source electrode 8 and a drain electrode 9, each of the internal surfaces of the through holes 7 is made a slope. For example, a semiconductor film 2, impurity-doped semiconductor films 3, a gate insulating film 4, a gate electrode 5, and a protective insulating film 6 are respectively formed on an insulating substrate 1. And, two layers of the gate insulating film 4 and the protective insulating film 6 are patterned to bore the through holes 7 in which each of the internal surfaces is made a slope therethrough. Therefore, the source electrode 8 and the drain electrode 9 can electrically contact with the respective impurity-doped semiconductor films 3 easily through the respective through holes 7.
JP62188897A 1987-07-30 1987-07-30 Thin film transistor Pending JPS6433971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62188897A JPS6433971A (en) 1987-07-30 1987-07-30 Thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62188897A JPS6433971A (en) 1987-07-30 1987-07-30 Thin film transistor

Publications (1)

Publication Number Publication Date
JPS6433971A true JPS6433971A (en) 1989-02-03

Family

ID=16231793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62188897A Pending JPS6433971A (en) 1987-07-30 1987-07-30 Thin film transistor

Country Status (1)

Country Link
JP (1) JPS6433971A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159368A (en) * 2003-11-27 2005-06-16 Samsung Sdi Co Ltd Flat plate display device
JP2017108163A (en) * 2011-09-29 2017-06-15 株式会社半導体エネルギー研究所 Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159368A (en) * 2003-11-27 2005-06-16 Samsung Sdi Co Ltd Flat plate display device
US7936125B2 (en) 2003-11-27 2011-05-03 Samsung Mobile Display Co., Ltd. Flat panel display
JP2017108163A (en) * 2011-09-29 2017-06-15 株式会社半導体エネルギー研究所 Semiconductor device
US9905702B2 (en) 2011-09-29 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2018186282A (en) * 2011-09-29 2018-11-22 株式会社半導体エネルギー研究所 Semiconductor device
KR20190126270A (en) * 2011-09-29 2019-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device

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