JPS56144558A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS56144558A JPS56144558A JP4830580A JP4830580A JPS56144558A JP S56144558 A JPS56144558 A JP S56144558A JP 4830580 A JP4830580 A JP 4830580A JP 4830580 A JP4830580 A JP 4830580A JP S56144558 A JPS56144558 A JP S56144558A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- layer
- region
- recess
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent an Al film from becoming excessively thin at the side surfaces of the gate electrode and wiring, and the disconnection thereof, by providing a recess in the semiconductor substrate under the region where conductive layers cross each other. CONSTITUTION:A recess 13 is previously formed in the Si substrate under the region where an Al thin film wiring crosses a polycrystalline Si gate electrode and wiring. Then, after an oxide thick film 12 has been formed in the inactive region, an insulated gate FET is formed according to the ordinary method. By said constitution, the unevenness of the Al thin film 8 wiring is extremely reduced. In addition, also in a multilayer wiring of three of more layers, in the semiconductor substrate under the region where the n-th layer, which is in the lower part, and the (n+1)th layer, which is in the upper part, cross each other, a recess to bury the electrode and wiring of the n-th layer can be provided so as to form the electrode and wiring of the (n+1)th layer through an insulating film. Thereby, the Al thin film is prevented from becoming excessively thin at the side surfaces of the polycrystalline Si gate electrode and wiring, and the disconnection thereof is completely prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4830580A JPS56144558A (en) | 1980-04-10 | 1980-04-10 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4830580A JPS56144558A (en) | 1980-04-10 | 1980-04-10 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56144558A true JPS56144558A (en) | 1981-11-10 |
Family
ID=12799706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4830580A Pending JPS56144558A (en) | 1980-04-10 | 1980-04-10 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56144558A (en) |
-
1980
- 1980-04-10 JP JP4830580A patent/JPS56144558A/en active Pending
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