JPS56144558A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56144558A
JPS56144558A JP4830580A JP4830580A JPS56144558A JP S56144558 A JPS56144558 A JP S56144558A JP 4830580 A JP4830580 A JP 4830580A JP 4830580 A JP4830580 A JP 4830580A JP S56144558 A JPS56144558 A JP S56144558A
Authority
JP
Japan
Prior art keywords
wiring
layer
region
recess
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4830580A
Other languages
Japanese (ja)
Inventor
Yasuhiro Funakoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4830580A priority Critical patent/JPS56144558A/en
Publication of JPS56144558A publication Critical patent/JPS56144558A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent an Al film from becoming excessively thin at the side surfaces of the gate electrode and wiring, and the disconnection thereof, by providing a recess in the semiconductor substrate under the region where conductive layers cross each other. CONSTITUTION:A recess 13 is previously formed in the Si substrate under the region where an Al thin film wiring crosses a polycrystalline Si gate electrode and wiring. Then, after an oxide thick film 12 has been formed in the inactive region, an insulated gate FET is formed according to the ordinary method. By said constitution, the unevenness of the Al thin film 8 wiring is extremely reduced. In addition, also in a multilayer wiring of three of more layers, in the semiconductor substrate under the region where the n-th layer, which is in the lower part, and the (n+1)th layer, which is in the upper part, cross each other, a recess to bury the electrode and wiring of the n-th layer can be provided so as to form the electrode and wiring of the (n+1)th layer through an insulating film. Thereby, the Al thin film is prevented from becoming excessively thin at the side surfaces of the polycrystalline Si gate electrode and wiring, and the disconnection thereof is completely prevented.
JP4830580A 1980-04-10 1980-04-10 Semiconductor device Pending JPS56144558A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4830580A JPS56144558A (en) 1980-04-10 1980-04-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4830580A JPS56144558A (en) 1980-04-10 1980-04-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56144558A true JPS56144558A (en) 1981-11-10

Family

ID=12799706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4830580A Pending JPS56144558A (en) 1980-04-10 1980-04-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56144558A (en)

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