JPS6476766A - Superconducting field-effect transistor - Google Patents

Superconducting field-effect transistor

Info

Publication number
JPS6476766A
JPS6476766A JP62234332A JP23433287A JPS6476766A JP S6476766 A JPS6476766 A JP S6476766A JP 62234332 A JP62234332 A JP 62234332A JP 23433287 A JP23433287 A JP 23433287A JP S6476766 A JPS6476766 A JP S6476766A
Authority
JP
Japan
Prior art keywords
superconductor
semiconductor
film
electrode
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62234332A
Other languages
Japanese (ja)
Inventor
Shuichi Tawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62234332A priority Critical patent/JPS6476766A/en
Publication of JPS6476766A publication Critical patent/JPS6476766A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To control the distance between superconductors, and realize high temperature operation, as the result of application of oxide superconductor of high critical temperature, even in the case where the environmental temperature rises and the exuding distance of the order parameter from the superconductor to a semiconductor becomes small, by applying two superconductor layers of a three-layer film to a source electrode and a drain electrode, and applying a electrode to a gate electrode. CONSTITUTION:A three-Iayer film composed of a superconductor 1, a semiconductor 2 and a superconductor 3 is formed on a superconductor wiring layer 7, and an insulating film 8 covering the three-layer film is formed by plasma CVD method or the like. A gate electrode 4 is formed on the side surface of the three-layer film, via the insulating film 8. A contact hole is made at a necessary part of the insulating film 8, and a drain electrode 5 and a source electrode 6 are formed. For superconducting material, oxide superconductor of LnBaCuO having critical temperature higher than or equal to liquid nitrogen temperature, or the like is selected, and for the semiconductor, Si is selected. The oxide superconductor can be formed by sputtering method or evaporation method. The semiconductor 2 is formed by sputtering method or evaporation method, and the film thickness (t) can be easily controlled to be several nm. As a result, operation under an environment at a temperature higher than or equal to the liquid nitrogen temperature is enabled.
JP62234332A 1987-09-17 1987-09-17 Superconducting field-effect transistor Pending JPS6476766A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62234332A JPS6476766A (en) 1987-09-17 1987-09-17 Superconducting field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62234332A JPS6476766A (en) 1987-09-17 1987-09-17 Superconducting field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6476766A true JPS6476766A (en) 1989-03-22

Family

ID=16969343

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62234332A Pending JPS6476766A (en) 1987-09-17 1987-09-17 Superconducting field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6476766A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6479863B2 (en) * 1999-03-24 2002-11-12 John M. Caywood Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6479863B2 (en) * 1999-03-24 2002-11-12 John M. Caywood Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell

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