JPS57106186A - Josephson element - Google Patents
Josephson elementInfo
- Publication number
- JPS57106186A JPS57106186A JP55183073A JP18307380A JPS57106186A JP S57106186 A JPS57106186 A JP S57106186A JP 55183073 A JP55183073 A JP 55183073A JP 18307380 A JP18307380 A JP 18307380A JP S57106186 A JPS57106186 A JP S57106186A
- Authority
- JP
- Japan
- Prior art keywords
- film
- onto
- insulating film
- mos transistor
- josephson element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/128—Junction-based devices having three or more electrodes, e.g. transistor-like structures
Abstract
PURPOSE:To obtain a lateral MOS transistor type Josephson element by a thick insulating film by oppositely arranging a superconductive layer onto a substrate through an insulating layer and switching a constantly conductive condition and a super conductive condition by a controlling conductor disposed onto the insulating layer. CONSTITUTION:In 24 is evaporated onto the substrate 22, and coated with an SiO2 film 26. A window 28 is opened to the superconductive metal In film 24 and the SiO2 film 26, and the insulating film 30 is formed onto an inner circumferential surface and the bottom of the window 28 through thermal oxidation. The film corresponds to a gate insulating film of an MOS transistor, and a gate electrode 32 is shaped onto the film. The Josephson element forms the MOS transistor while using the superconductors 24a, 24b at both sides of the gate electrode 32 as a source and a drain. Accordingly, the comparatively thick insulating film 5 Josephson element with approximately 700Angstrom is obtained, and the element can be integrated to a high degree.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55183073A JPS57106186A (en) | 1980-12-24 | 1980-12-24 | Josephson element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55183073A JPS57106186A (en) | 1980-12-24 | 1980-12-24 | Josephson element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57106186A true JPS57106186A (en) | 1982-07-01 |
JPH0217943B2 JPH0217943B2 (en) | 1990-04-24 |
Family
ID=16129273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55183073A Granted JPS57106186A (en) | 1980-12-24 | 1980-12-24 | Josephson element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57106186A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0181191A2 (en) * | 1984-11-05 | 1986-05-14 | Hitachi, Ltd. | Superconducting device |
JPS6212212A (en) * | 1985-07-10 | 1987-01-21 | Hitachi Ltd | Superconduction circuit |
EP0305167A2 (en) * | 1987-08-24 | 1989-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Electronic devices utilizing superconducting materials |
US4843446A (en) * | 1986-02-27 | 1989-06-27 | Hitachi, Ltd. | Superconducting photodetector |
US5012303A (en) * | 1983-11-30 | 1991-04-30 | Fujitsu Limited | Superconducting device |
US5126315A (en) * | 1987-02-27 | 1992-06-30 | Hitachi, Ltd. | High tc superconducting device with weak link between two superconducting electrodes |
US5272358A (en) * | 1986-08-13 | 1993-12-21 | Hitachi, Ltd. | Superconducting device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5220773A (en) * | 1975-08-09 | 1977-02-16 | Shinji Kawamichi | Semi-conductor element |
-
1980
- 1980-12-24 JP JP55183073A patent/JPS57106186A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5220773A (en) * | 1975-08-09 | 1977-02-16 | Shinji Kawamichi | Semi-conductor element |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5012303A (en) * | 1983-11-30 | 1991-04-30 | Fujitsu Limited | Superconducting device |
EP0181191A2 (en) * | 1984-11-05 | 1986-05-14 | Hitachi, Ltd. | Superconducting device |
US5126801A (en) * | 1984-11-05 | 1992-06-30 | Hitachi, Ltd. | Superconducting device |
US5311036A (en) * | 1984-11-05 | 1994-05-10 | Hitachi, Ltd | Superconducting device |
JPS6212212A (en) * | 1985-07-10 | 1987-01-21 | Hitachi Ltd | Superconduction circuit |
US4843446A (en) * | 1986-02-27 | 1989-06-27 | Hitachi, Ltd. | Superconducting photodetector |
US5272358A (en) * | 1986-08-13 | 1993-12-21 | Hitachi, Ltd. | Superconducting device |
US5126315A (en) * | 1987-02-27 | 1992-06-30 | Hitachi, Ltd. | High tc superconducting device with weak link between two superconducting electrodes |
US5552375A (en) * | 1987-02-27 | 1996-09-03 | Hitachi, Ltd. | Method for forming high Tc superconducting devices |
US6069369A (en) * | 1987-02-27 | 2000-05-30 | Hitachi, Ltd. | Superconducting device |
EP0305167A2 (en) * | 1987-08-24 | 1989-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Electronic devices utilizing superconducting materials |
Also Published As
Publication number | Publication date |
---|---|
JPH0217943B2 (en) | 1990-04-24 |
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