JPS5643768A - Fet transistor and method of producing the same - Google Patents

Fet transistor and method of producing the same

Info

Publication number
JPS5643768A
JPS5643768A JP11967779A JP11967779A JPS5643768A JP S5643768 A JPS5643768 A JP S5643768A JP 11967779 A JP11967779 A JP 11967779A JP 11967779 A JP11967779 A JP 11967779A JP S5643768 A JPS5643768 A JP S5643768A
Authority
JP
Japan
Prior art keywords
gate electrode
lessen
electrode
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11967779A
Other languages
Japanese (ja)
Inventor
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP11967779A priority Critical patent/JPS5643768A/en
Publication of JPS5643768A publication Critical patent/JPS5643768A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To lessen the gate length while reducing the gate electrode resistance by covering the side of a gate electrode with an insulating material containing component elements of a gate electrode material. CONSTITUTION:An active layer 2 made up of an N type conductive layer is laminated on a semiconducing GaAs substrate 1. Then, with a photosensitive resin 6 as mask, Al51 is formed as gate electrode. Then, the side of the Al51 is converted into an aluminum oxide 7 by anode oxidation method for lessen the gate electrode length thereby forming a gate electrode 52. A photoetching and evaporation are used to form a source electrode 3 and a drain electrode 4 made up of gold-germanium which are subjected to a heat treatment.
JP11967779A 1979-09-17 1979-09-17 Fet transistor and method of producing the same Pending JPS5643768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11967779A JPS5643768A (en) 1979-09-17 1979-09-17 Fet transistor and method of producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11967779A JPS5643768A (en) 1979-09-17 1979-09-17 Fet transistor and method of producing the same

Publications (1)

Publication Number Publication Date
JPS5643768A true JPS5643768A (en) 1981-04-22

Family

ID=14767313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11967779A Pending JPS5643768A (en) 1979-09-17 1979-09-17 Fet transistor and method of producing the same

Country Status (1)

Country Link
JP (1) JPS5643768A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173980A (en) * 1981-04-21 1982-10-26 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPS57176774A (en) * 1981-04-23 1982-10-30 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS5879768A (en) * 1981-11-05 1983-05-13 Sumitomo Electric Ind Ltd Schottky gate field-effect transistor
JPS6057980A (en) * 1983-09-09 1985-04-03 Fujitsu Ltd Manufacture of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012984A (en) * 1973-06-01 1975-02-10
JPS5378A (en) * 1976-06-23 1978-01-05 Nec Corp Schottky barrier type field effect transistor
JPS53125775A (en) * 1977-04-08 1978-11-02 Nec Corp Gallium arsenide schottky barrier type field effect transistor and its manufacture
JPS54126483A (en) * 1978-03-24 1979-10-01 Nec Corp Schottky barrier gate field effect transistor and its production

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012984A (en) * 1973-06-01 1975-02-10
JPS5378A (en) * 1976-06-23 1978-01-05 Nec Corp Schottky barrier type field effect transistor
JPS53125775A (en) * 1977-04-08 1978-11-02 Nec Corp Gallium arsenide schottky barrier type field effect transistor and its manufacture
JPS54126483A (en) * 1978-03-24 1979-10-01 Nec Corp Schottky barrier gate field effect transistor and its production

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173980A (en) * 1981-04-21 1982-10-26 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPH0126195B2 (en) * 1981-04-21 1989-05-22 Sumitomo Electric Industries
JPS57176774A (en) * 1981-04-23 1982-10-30 Sumitomo Electric Ind Ltd Field effect transistor and manufacture thereof
JPS6336149B2 (en) * 1981-04-23 1988-07-19 Sumitomo Electric Industries
JPS5879768A (en) * 1981-11-05 1983-05-13 Sumitomo Electric Ind Ltd Schottky gate field-effect transistor
JPH032340B2 (en) * 1981-11-05 1991-01-14 Sumitomo Electric Industries
JPS6057980A (en) * 1983-09-09 1985-04-03 Fujitsu Ltd Manufacture of semiconductor device
JPH0219622B2 (en) * 1983-09-09 1990-05-02 Fujitsu Ltd

Similar Documents

Publication Publication Date Title
JPS5643768A (en) Fet transistor and method of producing the same
JPS5683075A (en) Insulating gate type field-effect transistor circuit device
JPS56155531A (en) Manufacture of semiconductor device
JPS5519881A (en) Fieldeffect transistor
JPS5768073A (en) Field effect transistor
JPS5687368A (en) Semiconductor device
JPS5582469A (en) Preparation of semiconductor device
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS5734368A (en) Protective diode for insulated gate field-effect transistor
JPS5524419A (en) Insulated gate type field effect transistor
JPS5257786A (en) Field effect transistor
JPS52100877A (en) Field effect transistor of junction type
JPS56100480A (en) Electric field effect transistor
JPS56160071A (en) Manufacture of insulated gate type field effect transistor
JPS57197869A (en) Semiconductor device
JPS5372577A (en) High dielectric strength field effect transistor
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS5577173A (en) Preparation of insulating gate-type electric field- effective transistor
JPS56150864A (en) Semiconductor device
JPS5740973A (en) Inverter circuit and manufacture therefor
JPS5650573A (en) Mis tunnel diode type mosfet
JPS5291382A (en) Insulating gate type field effect transistor
JPS577156A (en) Preparation of complementary field effect semicondcutor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS5378787A (en) Field effect transistor