JPS57176774A - Field effect transistor and manufacture thereof - Google Patents

Field effect transistor and manufacture thereof

Info

Publication number
JPS57176774A
JPS57176774A JP6209581A JP6209581A JPS57176774A JP S57176774 A JPS57176774 A JP S57176774A JP 6209581 A JP6209581 A JP 6209581A JP 6209581 A JP6209581 A JP 6209581A JP S57176774 A JPS57176774 A JP S57176774A
Authority
JP
Japan
Prior art keywords
schottky electrode
ohmic
manufacture
melting point
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6209581A
Other languages
Japanese (ja)
Other versions
JPS6336149B2 (en
Inventor
Toshiki Ehata
Kenichi Kikuchi
Hideki Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP6209581A priority Critical patent/JPS57176774A/en
Publication of JPS57176774A publication Critical patent/JPS57176774A/en
Publication of JPS6336149B2 publication Critical patent/JPS6336149B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To obtain excellent microwave characteristics by an FET which is provided with a Schottky electrode comprising a high melting point metal on an operating layer formed on a substrate, two ohmic regions having high carrier concentration, and two ohmic electrodes. CONSTITUTION:A Schottky gate FET comprises a Schottky electrode 18 comprising a high melting point metal on the one operation layer 17 formed on a semi-insulating substrate 16, the two ohmic regions 20 which are formed by ion implantation with a Schottky electrode 18 as a mask and have the high carrier concentration, and the two ohmic electrodes 24 which are formed on the opposite sides to each other with respect to a double sided insulating film 22 formed by the surface oxidation of the Schottky electrode itself. Thus the excellent microwave characteristic is obtained.
JP6209581A 1981-04-23 1981-04-23 Field effect transistor and manufacture thereof Granted JPS57176774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6209581A JPS57176774A (en) 1981-04-23 1981-04-23 Field effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6209581A JPS57176774A (en) 1981-04-23 1981-04-23 Field effect transistor and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS57176774A true JPS57176774A (en) 1982-10-30
JPS6336149B2 JPS6336149B2 (en) 1988-07-19

Family

ID=13190148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6209581A Granted JPS57176774A (en) 1981-04-23 1981-04-23 Field effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57176774A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5643768A (en) * 1979-09-17 1981-04-22 Matsushita Electric Ind Co Ltd Fet transistor and method of producing the same

Also Published As

Publication number Publication date
JPS6336149B2 (en) 1988-07-19

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