JPS57197870A - Schottky barrier gate type field-effect transistor and manufacture thereof - Google Patents

Schottky barrier gate type field-effect transistor and manufacture thereof

Info

Publication number
JPS57197870A
JPS57197870A JP8231281A JP8231281A JPS57197870A JP S57197870 A JPS57197870 A JP S57197870A JP 8231281 A JP8231281 A JP 8231281A JP 8231281 A JP8231281 A JP 8231281A JP S57197870 A JPS57197870 A JP S57197870A
Authority
JP
Japan
Prior art keywords
schottky barrier
barrier gate
gate type
manufacture
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8231281A
Other languages
Japanese (ja)
Inventor
Kunikazu Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8231281A priority Critical patent/JPS57197870A/en
Publication of JPS57197870A publication Critical patent/JPS57197870A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Abstract

PURPOSE:To improve the dielectric strength and high-frequency characteristics of the Schottky barrier gate type FET by forming a source and a drain shaped in self-matching form at a narrow interval in response to a refractory metal. CONSTITUTION:An N type low resistance layer is formed to the surface of an N type GaAs high resistance semiconductor substrate 1 by utilizing an insulator mask 2, the refractory metal layer of Mo, W, etc. is shaped to the whole surface, and a gate electrode 4' with an undercut section is formed through patterning by using a resist layer 12. The source and drain regions 5, 6 are molded in self-matching form at the narrow intervals x' to the gate by implanting S ions by utilizing the resist pattern. Accordingly, the Schottky barrier gate type FET having excellent dielectric strength and high-frequency characteristics can be obtained.
JP8231281A 1981-05-29 1981-05-29 Schottky barrier gate type field-effect transistor and manufacture thereof Pending JPS57197870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8231281A JPS57197870A (en) 1981-05-29 1981-05-29 Schottky barrier gate type field-effect transistor and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8231281A JPS57197870A (en) 1981-05-29 1981-05-29 Schottky barrier gate type field-effect transistor and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57197870A true JPS57197870A (en) 1982-12-04

Family

ID=13771039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8231281A Pending JPS57197870A (en) 1981-05-29 1981-05-29 Schottky barrier gate type field-effect transistor and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57197870A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163662A (en) * 1985-01-14 1986-07-24 Agency Of Ind Science & Technol Manufacture of field-effect transistor
JPS61166080A (en) * 1984-12-28 1986-07-26 Fujitsu Ltd Field-effect transistor and manufacture thereof
US4847212A (en) * 1987-01-12 1989-07-11 Itt Gallium Arsenide Technology Center Self-aligned gate FET process using undercut etch mask

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012985A (en) * 1973-06-01 1975-02-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012985A (en) * 1973-06-01 1975-02-10

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166080A (en) * 1984-12-28 1986-07-26 Fujitsu Ltd Field-effect transistor and manufacture thereof
JPS61163662A (en) * 1985-01-14 1986-07-24 Agency Of Ind Science & Technol Manufacture of field-effect transistor
US4847212A (en) * 1987-01-12 1989-07-11 Itt Gallium Arsenide Technology Center Self-aligned gate FET process using undercut etch mask

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