JPS5673475A - Schottky barrier type field-effect transistor - Google Patents

Schottky barrier type field-effect transistor

Info

Publication number
JPS5673475A
JPS5673475A JP15092879A JP15092879A JPS5673475A JP S5673475 A JPS5673475 A JP S5673475A JP 15092879 A JP15092879 A JP 15092879A JP 15092879 A JP15092879 A JP 15092879A JP S5673475 A JPS5673475 A JP S5673475A
Authority
JP
Japan
Prior art keywords
electrode
gate electrode
film
semiconductor layer
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15092879A
Other languages
Japanese (ja)
Inventor
Yoshinobu Kadowaki
Takeshi Suzuki
Takashi Ishii
Mutsuyuki Otsubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15092879A priority Critical patent/JPS5673475A/en
Publication of JPS5673475A publication Critical patent/JPS5673475A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To shorten gate electrode length actually working and obtain excellent high-frequency characteristics by a method wherein a V-shaped groove is formed on a semiconductor layer, a gate electrode is made up to the groove and the semiconductor layers at the both sides are further undercut. CONSTITUTION:A source electrode 2 and a drain electrode 4 made up on a semiconductor layer 1 are coated with a photoresist film 5, and a V-shaped groove 6 is bored to a gate electrode forming section of the semiconductor layer 1 exposing between the electrodes 2, 4 by means of etching. The whole surface containing the groove 6 is coated with a gate electrode metal film 7, the film 7 is left only in a gate electrode 3 shape by lifting-off, and other film 7 and film 5 are removed. The resist film 5 is applied again, a surrounding section of the electrode 3 is removed, and etched, and an undercut is made up to the semiconductor layer 1 around the electrode 3. Thus, gate electrode length actually working can be shortened more than the length of the electrode 3 without increasing the electric resistance of electrode metal.
JP15092879A 1979-11-20 1979-11-20 Schottky barrier type field-effect transistor Pending JPS5673475A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15092879A JPS5673475A (en) 1979-11-20 1979-11-20 Schottky barrier type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15092879A JPS5673475A (en) 1979-11-20 1979-11-20 Schottky barrier type field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5673475A true JPS5673475A (en) 1981-06-18

Family

ID=15507465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15092879A Pending JPS5673475A (en) 1979-11-20 1979-11-20 Schottky barrier type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5673475A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142581A (en) * 1982-02-18 1983-08-24 Mitsubishi Electric Corp Schottky barrier gate type field effect transistor and preparation thereof
JPS58143577A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of buried gate field effect transistor
JPH01187978A (en) * 1988-01-22 1989-07-27 Mitsubishi Electric Corp Field-effect transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245280A (en) * 1975-10-07 1977-04-09 Sanyo Electric Co Ltd Field effect transistor of schottky barrier type

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5245280A (en) * 1975-10-07 1977-04-09 Sanyo Electric Co Ltd Field effect transistor of schottky barrier type

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142581A (en) * 1982-02-18 1983-08-24 Mitsubishi Electric Corp Schottky barrier gate type field effect transistor and preparation thereof
JPS6257264B2 (en) * 1982-02-18 1987-11-30 Mitsubishi Electric Corp
JPS58143577A (en) * 1982-02-22 1983-08-26 Toshiba Corp Manufacture of buried gate field effect transistor
JPH0358177B2 (en) * 1982-02-22 1991-09-04 Tokyo Shibaura Electric Co
JPH01187978A (en) * 1988-01-22 1989-07-27 Mitsubishi Electric Corp Field-effect transistor

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