JPS55118679A - Manufacture of field effect transistor - Google Patents

Manufacture of field effect transistor

Info

Publication number
JPS55118679A
JPS55118679A JP2709379A JP2709379A JPS55118679A JP S55118679 A JPS55118679 A JP S55118679A JP 2709379 A JP2709379 A JP 2709379A JP 2709379 A JP2709379 A JP 2709379A JP S55118679 A JPS55118679 A JP S55118679A
Authority
JP
Japan
Prior art keywords
gate electrode
etched
type layer
film
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2709379A
Other languages
Japanese (ja)
Inventor
Takeshi Suzuki
Hironobu Hatakeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2709379A priority Critical patent/JPS55118679A/en
Publication of JPS55118679A publication Critical patent/JPS55118679A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

PURPOSE:To form the gate electrode of a thick fine pattern on a field effect transistor by repeating steps of forming a resist film and conducting a photomechanical step. CONSTITUTION:An n-type layer 2 is formed on one main surface of a GaAs substrate 1, source and drain electrodes 3, 4 are formed thereon, and unnecessary n- type layer is then etched to be removed. Then, a resist film 6 is increased in thickness, and a gate electrode formed portion is removed by repeating a photomechanical technique and an etching process. Then, a normal thick resist film 6a is formed on the entire surface, and a gate electrode forming portion is etched to be removed. After this portion of the n-type layer 2 is etched to predetermined depth, a metal film 7 is evaporated on the entire surface, and the resist films 6, 6a are removed finally together with the unnecessary metal film 7 thereon. Thus, in can form a fine gate electrode pattern thereon in thick film.
JP2709379A 1979-03-07 1979-03-07 Manufacture of field effect transistor Pending JPS55118679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2709379A JPS55118679A (en) 1979-03-07 1979-03-07 Manufacture of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2709379A JPS55118679A (en) 1979-03-07 1979-03-07 Manufacture of field effect transistor

Publications (1)

Publication Number Publication Date
JPS55118679A true JPS55118679A (en) 1980-09-11

Family

ID=12211458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2709379A Pending JPS55118679A (en) 1979-03-07 1979-03-07 Manufacture of field effect transistor

Country Status (1)

Country Link
JP (1) JPS55118679A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958871A (en) * 1982-09-29 1984-04-04 Hitachi Ltd Field effect transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5958871A (en) * 1982-09-29 1984-04-04 Hitachi Ltd Field effect transistor

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