JPS55118679A - Manufacture of field effect transistor - Google Patents
Manufacture of field effect transistorInfo
- Publication number
- JPS55118679A JPS55118679A JP2709379A JP2709379A JPS55118679A JP S55118679 A JPS55118679 A JP S55118679A JP 2709379 A JP2709379 A JP 2709379A JP 2709379 A JP2709379 A JP 2709379A JP S55118679 A JPS55118679 A JP S55118679A
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- etched
- type layer
- film
- thick
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To form the gate electrode of a thick fine pattern on a field effect transistor by repeating steps of forming a resist film and conducting a photomechanical step. CONSTITUTION:An n-type layer 2 is formed on one main surface of a GaAs substrate 1, source and drain electrodes 3, 4 are formed thereon, and unnecessary n- type layer is then etched to be removed. Then, a resist film 6 is increased in thickness, and a gate electrode formed portion is removed by repeating a photomechanical technique and an etching process. Then, a normal thick resist film 6a is formed on the entire surface, and a gate electrode forming portion is etched to be removed. After this portion of the n-type layer 2 is etched to predetermined depth, a metal film 7 is evaporated on the entire surface, and the resist films 6, 6a are removed finally together with the unnecessary metal film 7 thereon. Thus, in can form a fine gate electrode pattern thereon in thick film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2709379A JPS55118679A (en) | 1979-03-07 | 1979-03-07 | Manufacture of field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2709379A JPS55118679A (en) | 1979-03-07 | 1979-03-07 | Manufacture of field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55118679A true JPS55118679A (en) | 1980-09-11 |
Family
ID=12211458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2709379A Pending JPS55118679A (en) | 1979-03-07 | 1979-03-07 | Manufacture of field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55118679A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5958871A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Field effect transistor |
-
1979
- 1979-03-07 JP JP2709379A patent/JPS55118679A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5958871A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Field effect transistor |
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