JPS5730376A - Manufacture of schottky barrier fet - Google Patents

Manufacture of schottky barrier fet

Info

Publication number
JPS5730376A
JPS5730376A JP10487180A JP10487180A JPS5730376A JP S5730376 A JPS5730376 A JP S5730376A JP 10487180 A JP10487180 A JP 10487180A JP 10487180 A JP10487180 A JP 10487180A JP S5730376 A JPS5730376 A JP S5730376A
Authority
JP
Japan
Prior art keywords
thin film
layer
film
etched
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10487180A
Other languages
Japanese (ja)
Other versions
JPS6222536B2 (en
Inventor
Toshio Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10487180A priority Critical patent/JPS5730376A/en
Publication of JPS5730376A publication Critical patent/JPS5730376A/en
Publication of JPS6222536B2 publication Critical patent/JPS6222536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable to precisely form a fine gate electrode on an overetched part of a thin film etched with different etchant from that of a passivation film in a Schottky barrier FET by forming the thin film etched as above and overetching the passivation film with the thin film as a mask. CONSTITUTION:A semiconductor layer 8 is grown on a semi-insulating substrate 6, and source electrode 10 and drain electrode 12 are formed with metallic films. An insulating layer (passivation film) 2 is formed on the substrate, and then a thin film 26 etched with different etchant from that of the layer 2 is formed on the layer 2 in the step (a). Then, with a resist film 14 formed with a window 16 as a mask the thin film 26 is etched to form a gate film 28 in the step (b), and then with the thin film 26 as a mask the layer 2 is overetched by a wet etching method to form a window 6 in the step (c). Then, a metal 18 is deposited to form a gate electrode 18, and the thin layer 26 is then removed in the step (c).
JP10487180A 1980-07-30 1980-07-30 Manufacture of schottky barrier fet Granted JPS5730376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10487180A JPS5730376A (en) 1980-07-30 1980-07-30 Manufacture of schottky barrier fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10487180A JPS5730376A (en) 1980-07-30 1980-07-30 Manufacture of schottky barrier fet

Publications (2)

Publication Number Publication Date
JPS5730376A true JPS5730376A (en) 1982-02-18
JPS6222536B2 JPS6222536B2 (en) 1987-05-19

Family

ID=14392278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10487180A Granted JPS5730376A (en) 1980-07-30 1980-07-30 Manufacture of schottky barrier fet

Country Status (1)

Country Link
JP (1) JPS5730376A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178571A (en) * 1982-04-14 1983-10-19 Nec Corp Semiconductor device
JPS5929463A (en) * 1982-08-12 1984-02-16 Nec Corp Manufacture of semiconductor device
JPS5947771A (en) * 1982-09-10 1984-03-17 Nec Corp Manufacture of semiconductor device
JPS59224176A (en) * 1983-06-03 1984-12-17 Nec Corp Manufacture of field effect transistor
US4670090A (en) * 1986-01-23 1987-06-02 Rockwell International Corporation Method for producing a field effect transistor
JPS63138776A (en) * 1986-12-01 1988-06-10 Hitachi Ltd Semiconductor device
JP2020123609A (en) * 2019-01-29 2020-08-13 日亜化学工業株式会社 Method for manufacturing light-emitting element
US11948797B2 (en) 2019-04-26 2024-04-02 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924368A (en) * 1972-06-27 1974-03-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924368A (en) * 1972-06-27 1974-03-04

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178571A (en) * 1982-04-14 1983-10-19 Nec Corp Semiconductor device
JPS5929463A (en) * 1982-08-12 1984-02-16 Nec Corp Manufacture of semiconductor device
JPS5947771A (en) * 1982-09-10 1984-03-17 Nec Corp Manufacture of semiconductor device
JPS59224176A (en) * 1983-06-03 1984-12-17 Nec Corp Manufacture of field effect transistor
JPH047101B2 (en) * 1983-06-03 1992-02-07 Nippon Electric Co
US4670090A (en) * 1986-01-23 1987-06-02 Rockwell International Corporation Method for producing a field effect transistor
JPS63138776A (en) * 1986-12-01 1988-06-10 Hitachi Ltd Semiconductor device
JP2020123609A (en) * 2019-01-29 2020-08-13 日亜化学工業株式会社 Method for manufacturing light-emitting element
US11296255B2 (en) 2019-01-29 2022-04-05 Nichia Corporation Manufacturing method of light-emitting element
US11948797B2 (en) 2019-04-26 2024-04-02 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6222536B2 (en) 1987-05-19

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