JPS57187966A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57187966A JPS57187966A JP7250581A JP7250581A JPS57187966A JP S57187966 A JPS57187966 A JP S57187966A JP 7250581 A JP7250581 A JP 7250581A JP 7250581 A JP7250581 A JP 7250581A JP S57187966 A JPS57187966 A JP S57187966A
- Authority
- JP
- Japan
- Prior art keywords
- film
- parts
- films
- ohmic electrodes
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To keep the distance between ohmic electrodes and a gate electrode constant even if there is deviation of plating guantity due to the fluctuation of the plating condition by determining that distance automatically by the guantity of overetching of an Al film. CONSTITUTION:An N type GaAs performance layer 12, an SiO2 film 21 and an Al film 31 are successively formed on a GaAs substrate 11 and parts of the Al film 31 where ohmic electrodes are not formed are covered by photoresistor films 41. Then the film 31 and the film 21 are removed successively using the films 41 as masks. And the parts of the film 31 remained under the films 41 is overetched to the length equal to the distance between the ohmic electrodes and a gate electrode. Then a metal layer for the ohmic electrodes are formed and the photorresistor films 41 are dissolved and unnecessary parts of the metal layer are removed by lifting-off a source electrode 511 and a drain electrode 512 are formed by thermal treatment. Then the surface is covered by photoresistor excpt the parts where wirings are formed. After the parts of the Al film and the SiO2 film where wiring are formed are removed. An Al film is formed and unnecessary parts of the Al film is removed by lifting-off and the wirings 611 and 612 are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7250581A JPS57187966A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7250581A JPS57187966A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57187966A true JPS57187966A (en) | 1982-11-18 |
Family
ID=13491261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7250581A Pending JPS57187966A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57187966A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58196055A (en) * | 1982-05-12 | 1983-11-15 | Hitachi Ltd | Manufacture of semiconductor device |
-
1981
- 1981-05-14 JP JP7250581A patent/JPS57187966A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58196055A (en) * | 1982-05-12 | 1983-11-15 | Hitachi Ltd | Manufacture of semiconductor device |
| JPH0354463B2 (en) * | 1982-05-12 | 1991-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54161894A (en) | Manufacture of semiconductor device | |
| JPS57187966A (en) | Manufacture of semiconductor device | |
| JPS5730376A (en) | Manufacture of schottky barrier fet | |
| JPS54139493A (en) | Manufacture of semiconductor device containing poly-crystal silicon layer | |
| JPS54130883A (en) | Production of semiconductor device | |
| JPS52113687A (en) | Production of semiconductor device | |
| JPS57109365A (en) | Semiconductor ic device | |
| JPS5582469A (en) | Preparation of semiconductor device | |
| JPS5360567A (en) | Electrode formation method of semiconductor device | |
| JPS54136276A (en) | Manufacture for semiconductor device | |
| JPS531471A (en) | Manufacture for semiconductor device | |
| JPS57180176A (en) | Manufacturing method for semiconductor device | |
| JPS54106174A (en) | Semiconductor device and its manufacture | |
| JPS5352388A (en) | Semiconductor device | |
| JPS5489594A (en) | Manufacture for integrated circuit | |
| JPS5363986A (en) | Production of semiconductor device | |
| JPS57145320A (en) | Manufacture of semiconductor device | |
| JPS5734368A (en) | Protective diode for insulated gate field-effect transistor | |
| JPS57206049A (en) | Manufacture of semiconductor device | |
| JPS55125633A (en) | Production of semiconductor device | |
| JPS6450560A (en) | Manufacture of semiconductor device | |
| JPS54162484A (en) | Manufacture of semiconductor device | |
| JPS54139486A (en) | Manufacture of semiconductor device | |
| JPS54889A (en) | Semiconductor integrated circuit device and its manufacture | |
| JPS5754344A (en) | Semiconductor device |