JPS54162484A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54162484A
JPS54162484A JP7169678A JP7169678A JPS54162484A JP S54162484 A JPS54162484 A JP S54162484A JP 7169678 A JP7169678 A JP 7169678A JP 7169678 A JP7169678 A JP 7169678A JP S54162484 A JPS54162484 A JP S54162484A
Authority
JP
Japan
Prior art keywords
film
semiconductor
etching
metal
electrode metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7169678A
Other languages
Japanese (ja)
Inventor
Naoyuki Tsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7169678A priority Critical patent/JPS54162484A/en
Publication of JPS54162484A publication Critical patent/JPS54162484A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To prevent an alloy layer, etc., from remaining on a semiconductor surface and the surface from reacting on an etching solution by carrying out mesa etching and etching of electrode metal with the semiconductor surface covered with an insulator film. CONSTITUTION:On the surface of semiconductor substrate 11, insulator film 14 is formed. Next, a window is made in film 14 at a fixed place. In this window, electrode metal 12 is formed. On electrode metal 12 and its circumference, photo resist film 13 is formed. Next, this film 13 used as a mask to etch insulator film 14. Then, films 13 and 14 are used as a mask to etch the surface of semiconductor substrate 11 in a mesa shape. In this case, side etching of semiconductor 11 under film 14 is carried out until a place extremely close to the junction part between metal 12 and film 14. This method prevents an alloy layer, etc., formed at the interface between semiconductor 11 and metal 12, from remaining on the surface of semiconductor 11 and the surface from reacting on an etching solution because the surface of semiconductor 11 is covered with film 14.
JP7169678A 1978-06-13 1978-06-13 Manufacture of semiconductor device Pending JPS54162484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7169678A JPS54162484A (en) 1978-06-13 1978-06-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7169678A JPS54162484A (en) 1978-06-13 1978-06-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54162484A true JPS54162484A (en) 1979-12-24

Family

ID=13467957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7169678A Pending JPS54162484A (en) 1978-06-13 1978-06-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54162484A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647339A (en) * 1984-05-23 1987-03-03 British Telecommunications Production of semiconductor devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS493032A (en) * 1972-05-02 1974-01-11
JPS51111086A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Manufacturing method of semi-conductor equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS493032A (en) * 1972-05-02 1974-01-11
JPS51111086A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Manufacturing method of semi-conductor equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4647339A (en) * 1984-05-23 1987-03-03 British Telecommunications Production of semiconductor devices

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