JPS5613733A - Forming method for electrode - Google Patents

Forming method for electrode

Info

Publication number
JPS5613733A
JPS5613733A JP8897979A JP8897979A JPS5613733A JP S5613733 A JPS5613733 A JP S5613733A JP 8897979 A JP8897979 A JP 8897979A JP 8897979 A JP8897979 A JP 8897979A JP S5613733 A JPS5613733 A JP S5613733A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
anode oxide
constitution
coated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8897979A
Other languages
Japanese (ja)
Inventor
Shigenobu Yamagoshi
Hisashi Hamaguchi
Tomonobu Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8897979A priority Critical patent/JPS5613733A/en
Publication of JPS5613733A publication Critical patent/JPS5613733A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate

Abstract

PURPOSE:To obtain excellent electrode connection by a method wherein an anode oxide film is formed on a semiconductor substrate, a plurality of insulating films are stacked, and a window reaching the substrate is made up. CONSTITUTION:An anode oxide film 6 is formed on a GaAs substrate 1, the whole is heated in vacuum, and the oxide film is stabilized. When an insulating film 2 in SiO2, etc. is coated, a deteriorating layer is not made up on the surface of the substrate because the surface is protected by the anode oxide film. A resist mask 7 is coated, these films and mask are etched with fluoric acid, a connecting region 4 is built up, and an electrode metallic layer 5 is formed. This constitution can obtain excellent electrode connection in a reproducible shape because there is no deteriorating layer on the surface of the substrate.
JP8897979A 1979-07-13 1979-07-13 Forming method for electrode Pending JPS5613733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8897979A JPS5613733A (en) 1979-07-13 1979-07-13 Forming method for electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8897979A JPS5613733A (en) 1979-07-13 1979-07-13 Forming method for electrode

Publications (1)

Publication Number Publication Date
JPS5613733A true JPS5613733A (en) 1981-02-10

Family

ID=13957912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8897979A Pending JPS5613733A (en) 1979-07-13 1979-07-13 Forming method for electrode

Country Status (1)

Country Link
JP (1) JPS5613733A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262143B1 (en) * 1998-06-26 2001-07-17 Binney & Smith Inc. Erasable colored pencil lead
US6271286B1 (en) * 1998-06-26 2001-08-07 Binney & Smith Inc. Erasable colored pencil lead

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262143B1 (en) * 1998-06-26 2001-07-17 Binney & Smith Inc. Erasable colored pencil lead
US6271286B1 (en) * 1998-06-26 2001-08-07 Binney & Smith Inc. Erasable colored pencil lead

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