JPS5748287A - Multi-factor semiconductor element - Google Patents

Multi-factor semiconductor element

Info

Publication number
JPS5748287A
JPS5748287A JP12364980A JP12364980A JPS5748287A JP S5748287 A JPS5748287 A JP S5748287A JP 12364980 A JP12364980 A JP 12364980A JP 12364980 A JP12364980 A JP 12364980A JP S5748287 A JPS5748287 A JP S5748287A
Authority
JP
Japan
Prior art keywords
insulating film
film
built
attached
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12364980A
Other languages
Japanese (ja)
Inventor
Koji Shinohara
Yoshito Nishijima
Hirokazu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12364980A priority Critical patent/JPS5748287A/en
Publication of JPS5748287A publication Critical patent/JPS5748287A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a device of high reliability by a method wherein an insulating film built on a region except an electrode connecting region is constructed using a laminated structure which consists of an oxide film of a semiconductor and an insulating film which is attached from outside. CONSTITUTION:An insulating film 5 built on a regin except an electrode 6, 7 is built using a laminated structure which consists of an oxide film 11 of a semiconductor and an insulating film 12 which is attached from outside. For example after a buffer layer 2, an active layer 3 and a top layer 4 is built on a PbTe substrae 1 mesa etching is applied. Next after an anodized oxide film 11 is formed an insulating film 12 consisting of MgF2 is attached. Using a photo resist film as a mask the anodized oxide film 11 on a region on which an electrode film is to be attached and the insulating film 12 are etched. Electrode films 6, 7 are formed at the end of the process. By this arrangement a device of high reliability is obtained.
JP12364980A 1980-09-05 1980-09-05 Multi-factor semiconductor element Pending JPS5748287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12364980A JPS5748287A (en) 1980-09-05 1980-09-05 Multi-factor semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12364980A JPS5748287A (en) 1980-09-05 1980-09-05 Multi-factor semiconductor element

Publications (1)

Publication Number Publication Date
JPS5748287A true JPS5748287A (en) 1982-03-19

Family

ID=14865819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12364980A Pending JPS5748287A (en) 1980-09-05 1980-09-05 Multi-factor semiconductor element

Country Status (1)

Country Link
JP (1) JPS5748287A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160622A (en) * 1984-01-31 1985-08-22 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60160622A (en) * 1984-01-31 1985-08-22 Fujitsu Ltd Manufacture of semiconductor device
JPH0213467B2 (en) * 1984-01-31 1990-04-04 Fujitsu Ltd

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