JPS5548933A - Forming of mesa groove - Google Patents

Forming of mesa groove

Info

Publication number
JPS5548933A
JPS5548933A JP12221278A JP12221278A JPS5548933A JP S5548933 A JPS5548933 A JP S5548933A JP 12221278 A JP12221278 A JP 12221278A JP 12221278 A JP12221278 A JP 12221278A JP S5548933 A JPS5548933 A JP S5548933A
Authority
JP
Japan
Prior art keywords
etching
etching solution
film
mesa groove
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12221278A
Other languages
Japanese (ja)
Inventor
Takeshi Yamamoto
Ichiro Kume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12221278A priority Critical patent/JPS5548933A/en
Publication of JPS5548933A publication Critical patent/JPS5548933A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a film of uniform thickness, by operating etching with No.1 etching solution via a film having an etching window, and subsequently operating etching with No.2 etching solution, and thereby forming a mesa groove with a circular or obtuse-angled opening part.
CONSTITUTION: Etching is done with No.1 etching solution consisting of a mixture of nitric acid 6, fluoric acid 1 and acetic acid 2, in volume ratio, via a film having etching window 2 formed on the surface of semiconductor wafer 1. Subsequently, etching is done with No.2 etching solution consisting of a mixture of nitric acid 5 and fluoric acid 1, in volume ratio. Here, wafer 1 is etched with No.2 etching solution, which has a higher speed than No.1 etching solution, and mesa groove 4 with a circular or obtuse-angled opening part is formed, and thereby a film of uniform thickness is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP12221278A 1978-10-03 1978-10-03 Forming of mesa groove Pending JPS5548933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12221278A JPS5548933A (en) 1978-10-03 1978-10-03 Forming of mesa groove

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12221278A JPS5548933A (en) 1978-10-03 1978-10-03 Forming of mesa groove

Publications (1)

Publication Number Publication Date
JPS5548933A true JPS5548933A (en) 1980-04-08

Family

ID=14830318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12221278A Pending JPS5548933A (en) 1978-10-03 1978-10-03 Forming of mesa groove

Country Status (1)

Country Link
JP (1) JPS5548933A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387682A (en) * 1980-09-26 1983-06-14 Toyota Jidosha Kogyo Kabushiki Kaisha Method and apparatus for controlling the air intake of an internal combustion engine
US4680615A (en) * 1984-06-14 1987-07-14 Brown, Boveri & Cie Ag Silicon semiconductor component with an edge contour made by an etching technique, and method for manufacturing this component

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387682A (en) * 1980-09-26 1983-06-14 Toyota Jidosha Kogyo Kabushiki Kaisha Method and apparatus for controlling the air intake of an internal combustion engine
US4680615A (en) * 1984-06-14 1987-07-14 Brown, Boveri & Cie Ag Silicon semiconductor component with an edge contour made by an etching technique, and method for manufacturing this component

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