JPS52125276A - Preparation of semiconductor integrated circuit device - Google Patents

Preparation of semiconductor integrated circuit device

Info

Publication number
JPS52125276A
JPS52125276A JP4212876A JP4212876A JPS52125276A JP S52125276 A JPS52125276 A JP S52125276A JP 4212876 A JP4212876 A JP 4212876A JP 4212876 A JP4212876 A JP 4212876A JP S52125276 A JPS52125276 A JP S52125276A
Authority
JP
Japan
Prior art keywords
preparation
integrated circuit
semiconductor integrated
circuit device
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4212876A
Other languages
Japanese (ja)
Other versions
JPS6142411B2 (en
Inventor
Sokichi Yamagishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4212876A priority Critical patent/JPS52125276A/en
Publication of JPS52125276A publication Critical patent/JPS52125276A/en
Publication of JPS6142411B2 publication Critical patent/JPS6142411B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To reduce the numbers of formation of oxide films by etching previously the portions of the surface of a semiconductor substrate to which impurities are to be added firstly, whereby the ion injection process using a photoresist as a mask is rendered possible.
COPYRIGHT: (C)1977,JPO&Japio
JP4212876A 1976-04-14 1976-04-14 Preparation of semiconductor integrated circuit device Granted JPS52125276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4212876A JPS52125276A (en) 1976-04-14 1976-04-14 Preparation of semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4212876A JPS52125276A (en) 1976-04-14 1976-04-14 Preparation of semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS52125276A true JPS52125276A (en) 1977-10-20
JPS6142411B2 JPS6142411B2 (en) 1986-09-20

Family

ID=12627292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4212876A Granted JPS52125276A (en) 1976-04-14 1976-04-14 Preparation of semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS52125276A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574124A (en) * 1980-06-10 1982-01-09 Fujitsu Ltd Manufacture of germanium semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574124A (en) * 1980-06-10 1982-01-09 Fujitsu Ltd Manufacture of germanium semiconductor device

Also Published As

Publication number Publication date
JPS6142411B2 (en) 1986-09-20

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