JPS5754344A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5754344A
JPS5754344A JP55130491A JP13049180A JPS5754344A JP S5754344 A JPS5754344 A JP S5754344A JP 55130491 A JP55130491 A JP 55130491A JP 13049180 A JP13049180 A JP 13049180A JP S5754344 A JPS5754344 A JP S5754344A
Authority
JP
Japan
Prior art keywords
regions
region
gate
semiconductor device
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55130491A
Other languages
Japanese (ja)
Inventor
Kunimitsu Fujiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55130491A priority Critical patent/JPS5754344A/en
Publication of JPS5754344A publication Critical patent/JPS5754344A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enhance the integration at the master slice method of semiconductor device by curtailing gaps between respective diffusion regions and wiring regions. CONSTITUTION:Thin oxide films of source and drain regions 41, 42, 43 of an MOSFET are removed remaining gate regions 20, 30, and diffusion of an impurity is performed to form master slices. At this time, the region 30 is divided into regions 31, 32, a polycrystalline silicon film 302 is formed on the region 32, for example, and after patterning is performed, an oxide film is formed on the surface thereof, and moreover when an aluminum film is evaporated to form electrodes 63, 64, the gate region 302 to be connected to the gate electrode 64 and the electrode 63 to constitute respective independent circuit parts are formed on the region 30.
JP55130491A 1980-09-19 1980-09-19 Semiconductor device Pending JPS5754344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55130491A JPS5754344A (en) 1980-09-19 1980-09-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55130491A JPS5754344A (en) 1980-09-19 1980-09-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5754344A true JPS5754344A (en) 1982-03-31

Family

ID=15035524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130491A Pending JPS5754344A (en) 1980-09-19 1980-09-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5754344A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604460A (en) * 1983-06-22 1985-01-10 株式会社日立製作所 Truck for railway rolling stock

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604460A (en) * 1983-06-22 1985-01-10 株式会社日立製作所 Truck for railway rolling stock
JPH044185B2 (en) * 1983-06-22 1992-01-27

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