JPS522289A - Method of manufacturing insulation gate-type semiconductor integration circuit device - Google Patents
Method of manufacturing insulation gate-type semiconductor integration circuit deviceInfo
- Publication number
- JPS522289A JPS522289A JP7671275A JP7671275A JPS522289A JP S522289 A JPS522289 A JP S522289A JP 7671275 A JP7671275 A JP 7671275A JP 7671275 A JP7671275 A JP 7671275A JP S522289 A JPS522289 A JP S522289A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- type semiconductor
- circuit device
- integration circuit
- insulation gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To eliminate the contamination of gate-forming oxide film, to enhance the gate breakdown voltage and to prevent the development of VLS phenomenon (abnormal growth of multicrystalline Si) by forming a multicrystalline Si wiring pattern on a Si gate MOS IC, and then forming gate-forming oxide film and a gate electrode.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7671275A JPS522289A (en) | 1975-06-24 | 1975-06-24 | Method of manufacturing insulation gate-type semiconductor integration circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7671275A JPS522289A (en) | 1975-06-24 | 1975-06-24 | Method of manufacturing insulation gate-type semiconductor integration circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS522289A true JPS522289A (en) | 1977-01-08 |
Family
ID=13613143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7671275A Pending JPS522289A (en) | 1975-06-24 | 1975-06-24 | Method of manufacturing insulation gate-type semiconductor integration circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS522289A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53147473A (en) * | 1977-05-27 | 1978-12-22 | Mitsubishi Electric Corp | Production of mis type semiconductor device |
JPS572519A (en) * | 1980-06-05 | 1982-01-07 | Nec Corp | Manufacture of semiconductor device |
JPS6089873A (en) * | 1983-10-21 | 1985-05-20 | Sony Corp | Error correcting method |
JPS61129777A (en) * | 1984-11-28 | 1986-06-17 | Nec Corp | Optical disc processing device |
JPS62273775A (en) * | 1986-05-21 | 1987-11-27 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS63144466A (en) * | 1986-12-05 | 1988-06-16 | Nec Corp | Error correction device |
-
1975
- 1975-06-24 JP JP7671275A patent/JPS522289A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53147473A (en) * | 1977-05-27 | 1978-12-22 | Mitsubishi Electric Corp | Production of mis type semiconductor device |
JPS572519A (en) * | 1980-06-05 | 1982-01-07 | Nec Corp | Manufacture of semiconductor device |
JPS6089873A (en) * | 1983-10-21 | 1985-05-20 | Sony Corp | Error correcting method |
JPS61129777A (en) * | 1984-11-28 | 1986-06-17 | Nec Corp | Optical disc processing device |
JPS62273775A (en) * | 1986-05-21 | 1987-11-27 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS63144466A (en) * | 1986-12-05 | 1988-06-16 | Nec Corp | Error correction device |
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