JPS5457873A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5457873A
JPS5457873A JP12427377A JP12427377A JPS5457873A JP S5457873 A JPS5457873 A JP S5457873A JP 12427377 A JP12427377 A JP 12427377A JP 12427377 A JP12427377 A JP 12427377A JP S5457873 A JPS5457873 A JP S5457873A
Authority
JP
Japan
Prior art keywords
film
polysi
metal
thermal diffusion
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12427377A
Other languages
Japanese (ja)
Inventor
Matsuo Ichinose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12427377A priority Critical patent/JPS5457873A/en
Publication of JPS5457873A publication Critical patent/JPS5457873A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent an electrode during a process such as thermal diffusion and a heat treatment from changing in quality by making a two-layer gate electrode of metal and PolySi as to a semiconductor integrated circuit device using a MOS type field effect transistor as its constitution element.
CONSTITUTION: On N-type silicon substrate 1, oxidized film 2 is formed where the unneeded parts are removed, and gate-oxidized film 3, Mo metal film 4 and PolySi film 5 are formed. Then P+ diffusion layer 6 is formed through thermal diffusion for P+ on them. Next, CVSiO2 film 7, Al wiring 8 and CVDSiO2 film 9 are sequentially formed
COPYRIGHT: (C)1979,JPO&Japio
JP12427377A 1977-10-17 1977-10-17 Semiconductor device Pending JPS5457873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12427377A JPS5457873A (en) 1977-10-17 1977-10-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12427377A JPS5457873A (en) 1977-10-17 1977-10-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5457873A true JPS5457873A (en) 1979-05-10

Family

ID=14881247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12427377A Pending JPS5457873A (en) 1977-10-17 1977-10-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5457873A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143068A (en) * 1979-04-25 1980-11-08 Hitachi Ltd Insulated gate semiconductor device
JPS6070762A (en) * 1983-09-28 1985-04-22 Hitachi Ltd Electrode-wiring structure of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55143068A (en) * 1979-04-25 1980-11-08 Hitachi Ltd Insulated gate semiconductor device
JPS6070762A (en) * 1983-09-28 1985-04-22 Hitachi Ltd Electrode-wiring structure of semiconductor device

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